ZHCSLI5 September 2020 LM34966-Q1
PRODUCTION DATA
The device is capable of operating at a wide temperature range including high junction temperature up to 150°C. It is designed to meet or exceed AEC-Q100 grade 1 specifications by accommodating additional IC junction temperature rise while operating at 125°C ambient temperature. The electrical specifications of the device is fully characterized between TJ of -40°C to 150°C to support automotive and other high junction temperature applications. Extended reliability test data beyond AEC-Q100 grade 1 specification is also available upon request.
The device is capable of supporting product lifetime operation temperature profiles typical to many automotive applications. Table 9-1 shows an example of an application with 19340 POH at an input bias voltage of 40 V. The life span of a semiconductor device is a function of bias conditions, operating temperatures, and power-on time. Extended operation at high junction temperature degrades the product total power-on hours.
| JUNCTION TEMPERATURE | POWER-ON HOURS | DISTRIBUTION | OPERATING CONDITIONS |
|---|---|---|---|
| -15°C | 720 Hours | 3.7% |
BIAS = 40 V Ea = 0.7eV |
| 48°C | 6300 Hours | 32.6% | |
| 101°C | 11000 Hours | 56.9% | |
| 145°C | 1200 Hours | 6.2% | |
| 150°C | 120 Hours | 0.6% |