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ZHCSDM9A December 2014 – March 2018 LDC1612 , LDC1614

PRODUCTION DATA.

封裝選項

機械數(shù)據(jù) (封裝 | 引腳)

RGH|16
- MPQF182B

散熱焊盤機械數(shù)據(jù) (封裝 | 引腳)

RGH|16
- QFND440A

訂購信息

6.5 Electrical Characteristics

Unless otherwise specified, all limits ensured for T_A = 25°C, V_DD = 3.3 V. See ⁽⁴⁾

PARAMETER		TEST CONDITIONS⁽³⁾	MIN⁽⁵⁾	TYP⁽⁶⁾	MAX⁽⁵⁾	UNIT
POWER
V_DD	Supply Voltage	T_A = -40°C to +125°C	2.7		3.6	V
I_DD	Supply Current (not including sensor current)⁽¹⁾	ƒ_CLKIN = 10 MHz ⁽²⁾		2.1		mA
I_DDSL	Sleep Mode Supply Current⁽¹⁾	SLEEP_MODE_EN = b1		35	60	µA
I_SD	Shutdown Mode Supply Current⁽¹⁾	SD = V_DD		0.2	1	µA
SENSOR
I_SENSORMAX	Sensor Maximum Current drive	HIGH_CURRENT_DRV = b0 DRIVE_CURRENTx = 0xF800		1.5		mA
R_P	Sensor R_P	HIGH_CURRENT_DRV = b0 DRIVE_CURRENTx = 0xF800	1		100	kΩ
IHD_SENSORMAX	High current sensor drive mode: Sensor Maximum Current	HIGH_CURRENT_DRV = b1 DRIVE_CURRENT0 = 0xF800 Channel 0 only		6		mA
R_P_{_HD_MIN}	Minimum sensor R_P			250		Ω
ƒ_SENSOR	Sensor Resonance Frequency	T_A = -40°C to +125°C	0.001		10	MHz
V_SENSORMAX	Maximum oscillation amplitude (peak)			1.8		V
N_BITS	Number of bits				28	bits
ƒ_CS	Maximum Channel Sample Rate	single active channel continuous conversion, SCL=400 kHz			4.08	kSPS
C_IN	Sensor Pin input capacitance			4		pF
DIGITAL PIN LEVELS
V_IL	Low voltage threshold (ADDR and SD)				0.3*V_DD	V
V_IH	High voltage threshold (ADDR and SD)		0.7*V_DD			V
V_OL	INTB low voltage output level	3mA sink current			0.4	V
V_OH	INTB high voltage output level		2.4			V
REFERENCE CLOCK
ƒ_CLKIN	External Reference Clock Input Frequency (CLKIN)	T_A = -40°C to +125°C	2		40	MHz
CLKIN_{DUTY_MIN}	External Reference Clock minimum acceptable duty cycle (CLKIN)			40%
CLKIN_{DUTY_MAX}	External Reference Clock maximum acceptable duty cycle (CLKIN)			60%
V_{CLKIN_LO}	CLKIN low voltage threshold				0.3*V_DD	V
V_{CLKIN_HI}	CLKIN high voltage threshold		0.7*V_DD			V
ƒ_INTCLK	Internal Reference Clock Frequency range		35	43.4	55	MHz
T_{Cf_int_μ}	Internal Reference Clock Temperature Coefficient mean			-13		ppm/°C
TIMING CHARACTERISTICS
t_WAKEUP	Wake-up Time from SD high-low transition to I2C readback				2	ms
t_WD-TIMEOUT	Sensor recovery time (after watchdog timeout)			5.2		ms

(1) I²C read/write communication and pull-up resistors current through SCL, SDA not included.

(2) Sensor inductor: 2 layer, 32 turns/layer, 14 mm diameter, PCB inductor with L=19.4 µH, R_P=5.7 kΩ at 2 MHz Sensor capacitor: 330 pF 1% COG/NP0 Target: Aluminum, 1.5 mm thickness Channel = Channel 0 (continuous mode) ƒ_CLKIN = 40 MHz, FIN_DIVIDER0 = b0000, FREF_DIVIDER0 = 0x0001, RCOUNT0 = 0xFFFF, SETTLECOUNT0 = 0x0100, RP_OVERRIDE = b1, AUTO_AMP_DIS = b1, DRIVE_CURRENT0 = 0x9800

(3) Register values are represented as either binary (b is the prefix to the digits), or hexadecimal (0x is the prefix to the digits). Decimal values have no prefix.

(4) Electrical Characteristics Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device such that T_J = T_A. No guarantee of parametric performance is indicated in the electrical tables under conditions of internal self-heating where T_J> T_A. Absolute Maximum Ratings indicate junction temperature limits beyond which the device may be permanently degraded, either mechanically or electrically.

(5) Limits are ensured by testing, design, or statistical analysis at 25°C. Limits over the operating temperature range are ensured through correlations using statistical quality control (SQC) method.

(6) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary over time and will also depend on the application and configuration. The typical values are not tested and are not guaranteed on shipped production material.