ZHCSDT1D june 2015 – may 2023 ISO5451
PRODUCTION DATA
請參考 PDF 數(shù)據(jù)表獲取器件具體的封裝圖。
| MIN | MAX | UNIT | ||||
|---|---|---|---|---|---|---|
| VCC1 | Supply voltage input side | GND1 – 0.3 | 6 | V | ||
| VCC2 | Positive supply voltage output side | (VCC2 – GND2) | –0.3 | 35 | V | |
| VEE2 | Negative supply voltage output side | (VEE2 – GND2) | –17.5 | 0.3 | V | |
| V(SUP2) | Total supply output voltage | (VCC2 – VEE2) | –0.3 | 35 | V | |
| VOUT | Gate driver output voltage | VEE2 – 0.3 | VCC2 + 0.3 | V | ||
| I(OUTH) | Gate driver high output current | Gate driver high output current (max pulse width = 10 μs, max duty cycle = 0.2%) | 2.7 | A | ||
| I(OUTL) | Gate driver low output current | Gate driver high output current (max pulse width = 10 μs, max duty cycle = 0.2%) | 5.5 | A | ||
| V(LIP) | Voltage at IN+, IN–, FLT, RDY, RST | GND1 –0.3 | VCC1 + 0.3 | V | ||
| I(LOP) | Output current of FLT, RDY | 10 | mA | |||
| V(DESAT) | Voltage at DESAT | GND2– 0.3 | VCC2 + 0.3 | V | ||
| V(CLAMP) | Clamp voltage | VEE2 – 0.3 | VCC2 + 0.3 | V | ||
| TJ | Junction temperature | –40 | 150 | °C | ||
| TSTG | Storage temperature | –65 | 150 | °C | ||