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ZHCSIE0A June 2018 – October 2018 ISO224

PRODUCTION DATA.

封裝選項(xiàng)

機(jī)械數(shù)據(jù) (封裝 | 引腳)

DWV|8
- MPDS382B

散熱焊盤機(jī)械數(shù)據(jù) (封裝 | 引腳)

訂購信息

7.9 Electrical Characteristics

minimum and maximum specifications apply from T_A = –55°C to +125°C, VDD1 = 4.5 V to 18 V, VDD2 = 4.5 V to 5.5 V, V_IN = –12 V to 12 V, and R_LOAD = 10 kΩ; typical specifications are at T_A = 25°C, and VDD1 = VDD2 = 5 V (unless otherwise noted)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
ANALOG INPUT
V_OS	Input offset voltage⁽¹⁾	Initial, at T_A = 25°C, IN = GND1, ISO224B	–5	±1	5	mV
V_OS	Input offset voltage⁽¹⁾	Initial, at T_A = 25°C, IN = GND1, ISO224A	–50	±1	50	mV
TCV_OS	Input offset voltage drift⁽¹⁾	ISO224B	–15	±3	15	µV/°C
TCV_OS	Input offset voltage drift⁽¹⁾	ISO224A	–60	±12	60	µV/°C
C_IN	Input capacitance	IN to GND1		2		pF
R_IN	Input resistance	IN to GND1	1	1.25		MΩ
I_IB	Input bias current	IN = GND1		±15		nA
TCI_IB	Input bias current drift	IN = GND1		±30		pA/°C
e_n	Input-referred noise density	ISO224B		3		µV/√Hz
e_n	Input-referred noise density	ISO224A		4		µV/√Hz
ANALOG OUTPUTS
	Nominal gain	(V_OUTP – V_OUTN) / V_IN		1/3		V/V
E_G	Gain error⁽¹⁾	Initial, at T_A = 25°C, ISO224B	–0.3%	±0.05%	0.3%
E_G	Gain error⁽¹⁾	Initial, at T_A = 25°C, ISO224A	–1%	0.4%	1%
TCE_G	Gain error drift⁽¹⁾	ISO224B	–35	±10	35	ppm/°C
TCE_G	Gain error drift⁽¹⁾	ISO224A	–60	±20	60	ppm/°C
	Nonlinearity	ISO224B	–0.01%	±0.003%	0.01%
	Nonlinearity	ISO224A	–0.02%	±0.003%	0.02%
	Nonlinearity drift			±0.1		ppm/°C
THD	Total harmonic distortion	f_IN = 10 kHz		–84		dB
	Output noise	IN = GND1, f_IN = 0 Hz, BW = 10 kHz		300		µV_RMS
	Output noise	IN = GND1, f_IN = 0 Hz, BW = 100 kHz		360		µV_RMS
PSRR	Power-supply rejection ratio⁽²⁾	vs VDD1, at DC		–107		dB
		vs VDD1, 100-mV and 10-kHz ripple		–101
		vs VDD2, at DC		–71
		vs VDD2, 100-mV and 10-kHz ripple		–56
V_OUT	Output voltage	OUTP or OUTN to GND2	GND2 + 0.2		VDD2 – 0.2	V
V_CMout	Common-mode output voltage	(V_OUTP + V_OUTN) / 2	0.48 × VDD2	VDD2 / 2	0.52 × VDD2	V
V_FAILSAFE	Failsafe output voltage	VDD1 missing, OUTP and OUTN forced to GND2			GND2 + 0.1	V
I_SC	Output short-circuit current	On OUTP or OUTN to GND2		±18		mA
	Overload recovery time			5		µs
R_OUT	Output resistance	On OUTP or OUTN to GND2		< 0.5		Ω
C_LOAD	Capacitive load drive⁽³⁾	On OUTP or OUTN to GND2			100	pF
C_LOAD	Capacitive load drive⁽³⁾	OUTP to OUTN			50	pF
R_LOAD	Resistive load	On OUTP or OUTN		10		kΩ
BW	Small signal output bandwidth	ISO224B	220	275		kHz
BW	Small signal output bandwidth	ISO224A	150	185		kHz
CMTI	Common-mode transient immunity	\|GND1 – GND2\| = 1 kV, ISO224B	55	80		kV/µs
CMTI	Common-mode transient immunity	\|GND1 – GND2\| = 1 kV, ISO224A	15	30		kV/µs
POWER SUPPLY
I_DD1	High-side supply current			6.1	7.8	mA
I_DD2	Low-side supply current			7.8	9.9	mA

(1) The typical value includes one sigma statistical variation.

(2) This parameter is output referred.

(3) Use series resistor to decouple higher capacilive load.