ZHCSU26A December 2023 – February 2024 ESDS552
PRODUCTION DATA
請參考 PDF 數(shù)據(jù)表獲取器件具體的封裝圖。
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| VRWM | Reverse stand-off voltage | IIO < 50nA | -12 | 12 | V | |
| ILEAKAGE | Leakage current at VRWM | VIO = ±12V | 10 | 50 | nA | |
| VBR | Breakdown voltage, IO to GND and GND to IO(1) | IIO = ±1mA | 13.2 | 18 | V | |
| VCLAMP | Surge clamping voltage, tp = 8/20μs(2) | IPP = 1A, I/O to GND | 19 | V | ||
| IPP = 1A, GND to I/O | 19 | V | ||||
IPP = 20A, I/O to GND | 23.5 | V | ||||
| IPP = 20A, GND to I/O | 23.5 | V | ||||
RDYN | 8/20μs surge Dynamic Resistance | I/O to GND | 0.4 | Ω | ||
GND to I/O | 0.38 | |||||
CLine | Line capacitance, IO to GND | VIO = 0V, f = 1MHz | 9.5 | 11 | pF | |