ZHCSR66C November 2022 – December 2022 ESD751 , ESD761
PRODUCTION DATA
| PARAMETER | TEST CONDITIONS | DEVICE | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|---|
| VRWM | Reverse stand-off voltage | –24 | 24 | V | |||
| VBRF | Breakdown voltage(2) | IIO = 10 mA, IO to GND | 25.5 | 35.5 | V | ||
| VBRR | IIO = –10 mA, IO to GND | –35.5 | –25.5 | ||||
| VCLAMP | Clamping voltage(3) | IPP = 2.8 A, tp = 8/20 μs, IO to GND and GND to IO | ESD751 | 36.5 | V | ||
| IPP = 1.8 A, tp = 8/20 μs, IO to GND and GND to IO | ESD761 | 36.3 | |||||
| Clamping voltage(4) | IPP = 16 A, TLP, IO to GND and GND to IO | ESD751 | 41.5 | V | |||
| ESD761 | 42.5 | ||||||
| ILEAK | Leakage current | VIO = ±24 V, IO to GND | -50 | 1 | 50 | nA | |
| RDYN | Dynamic resistance(4) | ESD751 | 0.6 | Ω | |||
| ESD761 | 0.53 | ||||||
| CL | Line capacitance | VIO = 0 V, f = 1 MHz, Vpp = 30 mV, IO to GND | ESD751 | 1.6 | 2.7 | pF | |
| ESD761 | 1.1 | 1.8 | |||||