ZHCSIO8 August 2018 DS90UH949A-Q1
PRODUCTION DATA.
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| VIH,I2C | Input high level, I2C | SDA and SCL, VDDI2C = 1.8 V | 0.7 ×
VDDI2C |
V | ||
| SDA and SCL, VDDI2C = 3.3 V | 0.7 ×
VDDI2C |
V | ||||
| VIL,I2C | Input low level voltage, I2C | SDA and SCL, VDDI2C = 1.8 V | 0.3 ×
VDDI2C |
V | ||
| SDA and SCL, VDDI2C = 3.3 V | 0.3 ×
VDDI2C |
V | ||||
| VHY | Input hysteresis, I2C | SDA and SCL, VDDI2C = 1.8 V or 3.3 V | >50 | mV | ||
| VOL,I2C | Output low level, I2C | SDA and SCL, VDDI2C = 1.8-V, fast-mode, 3-mA sink current | GND | 0.2 × VDDI2C | V | |
| SDA and SCL, VDDI2C = 3.3-V, 3-mA sink current | GND | 0.4 | V | |||
| IIN,I2C | Input current, I2C | SDA and SCL, VDDI2C = 0 V | –800 | –600 | µA | |
| SDA and SCL, VDDI2C = VDD18 or VDD33 | –10 | 10 | µA | |||
| CIN,I2C | Input capacitance, I2C | SDA and SCL | 5 | pF | ||