ZHCS016E January 2011 – July 2015 DRV8833
PRODUCTION DATA.
- 1 特性
- 2 應用
- 3 說明
- 4 修訂歷史記錄
- 5 Pin Configuration and Functions
- 6 Specifications
- 7 Detailed Description
- 8 Application and Implementation
- 9 Power Supply Recommendations
- 10Layout
- 11器件和文檔支持
- 12機械、封裝和可訂購信息
封裝選項
請參考 PDF 數據表獲取器件具體的封裝圖。
機械數據 (封裝 | 引腳)
- PW|16
- RTY|16
- PWP|16
散熱焊盤機械數據 (封裝 | 引腳)
- PWP|16
訂購信息
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)| MIN | MAX | UNIT | ||
|---|---|---|---|---|
| VM | Power supply voltage | –0.3 | 11.8 | V |
| Digital input pin voltage | –0.5 | 7 | V | |
| xISEN pin voltage | –0.3 | 0.5 | V | |
| Peak motor drive output current | Internally limited | A | ||
| TJ | Operating junction temperature | –40 | 150 | °C |
| Tstg | Storage temperature | –60 | 150 | °C |
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
6.2 ESD Ratings
| VALUE | UNIT | ||||
|---|---|---|---|---|---|
| V(ESD) | Electrostatic discharge | Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) | ±4000 | V | |
| Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2) | ±1500 | ||||
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
TA = 25°C (unless otherwise noted)| MIN | NOM | MAX | UNIT | ||
|---|---|---|---|---|---|
| VM | Motor power supply voltage range(1) | 2.7 | 10.8 | V | |
| VDIGIN | Digital input pin voltage range | –0.3 | 5.75 | V | |
| IOUT | RTY package continuous RMS or DC output current per bridge(2) | 1.5 | A | ||
(1) RDS(ON) increases and maximum output current is reduced at VM supply voltages below 5 V.
(2) VM = 5 V, power dissipation and thermal limits must be observed.
6.4 Thermal Information
| THERMAL METRIC(1) | DRV8833 | UNIT | |||
|---|---|---|---|---|---|
| PWP (HTSSOP) |
RTY (WQFN) |
PW (TSSOP) |
|||
| 16 PINS | 16 PINS | 16 PINS | |||
| RθJA | Junction-to-ambient thermal resistance | 40.5 | 37.2 | 103.1 | °C/W |
| RθJC(top) | Junction-to-case (top) thermal resistance | 32.9 | 34.3 | 38 | °C/W |
| RθJB | Junction-to-board thermal resistance | 28.8 | 15.3 | 48.1 | °C/W |
| ψJT | Junction-to-top characterization parameter | 0.6 | 0.3 | 3 | °C/W |
| ψJB | Junction-to-board characterization parameter | 11.5 | 15.4 | 47.5 | °C/W |
| RθJC(bot) | Junction-to-case (bottom) thermal resistance | 4.8 | 3.5 | N/A | °C/W |
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.
6.5 Electrical Characteristics
TA = 25°C (unless otherwise noted)| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| POWER SUPPLY | ||||||
| IVM | VM operating supply current | VM = 5 V, xIN1 = 0 V, xIN2 = 0 V | 1.7 | 3 | mA | |
| IVMQ | VM sleep mode supply current | VM = 5 V | 1.6 | 2.5 | μA | |
| VUVLO | VM undervoltage lockout voltage | VM falling | 2.6 | V | ||
| VHYS | VM undervoltage lockout hysteresis | 90 | mV | |||
| LOGIC-LEVEL INPUTS | ||||||
| VIL | Input low voltage | nSLEEP | 0.5 | V | ||
| All other pins | 0.7 | |||||
| VIH | Input high voltage | nSLEEP | 2.5 | V | ||
| All other pins | 2 | |||||
| VHYS | Input hysteresis | 0.4 | V | |||
| RPD | Input pulldown resistance | nSLEEP | 500 | kΩ | ||
| All except nSLEEP | 150 | |||||
| IIL | Input low current | VIN = 0 | 1 | μA | ||
| IIH | Input high current | VIN = 3.3 V, nSLEEP | 6.6 | 13 | μA | |
| VIN = 3.3 V, all except nSLEEP | 16.5 | 33 | ||||
| tDEG | Input deglitch time | 450 | ns | |||
| nFAULT OUTPUT (OPEN-DRAIN OUTPUT) | ||||||
| VOL | Output low voltage | IO = 5 mA | 0.5 | V | ||
| IOH | Output high leakage current | VO = 3.3 V | 1 | μA | ||
| H-BRIDGE FETs | ||||||
| RDS(ON) | HS FET on resistance | VM = 5 V, I O = 500 mA, TJ = 25°C | 200 | mΩ | ||
| VM = 5 V, IO = 500 mA, TJ = 85°C | 325 | |||||
| VM = 2.7 V, I O = 500 mA, TJ = 25°C | 250 | |||||
| VM = 2.7 V, IO = 500 mA, TJ = 85°C | 350 | |||||
| LS FET on resistance | VM = 5 V, I O = 500 mA, TJ = 25°C | 160 | ||||
| VM = 5 V, IO = 500 mA, TJ = 85°C | 275 | |||||
| VM = 2.7 V, I O = 500 mA, TJ = 25°C | 200 | |||||
| VM = 2.7 V, IO = 500 mA, TJ = 85°C | 300 | |||||
| IOFF | Off-state leakage current | VM = 5 V, TJ = 25°C, VOUT = 0 V | –1 | 1 | μA | |
| MOTOR DRIVER | ||||||
| ƒPWM | Current control PWM frequency | Internal PWM frequency | 50 | kHz | ||
| tR | Rise time | VM = 5 V, 16 Ω to GND, 10% to 90% VM | 180 | ns | ||
| tF | Fall time | VM = 5 V, 16 Ω to GND, 10% to 90% VM | 160 | ns | ||
| tPROP | Propagation delay INx to OUTx | VM = 5 V | 1.1 | µs | ||
| tDEAD | Dead time(1) | VM = 5 V | 450 | ns | ||
| PROTECTION CIRCUITS | ||||||
| IOCP | Overcurrent protection trip level | 2 | 3.3 | A | ||
| tDEG | OCP Deglitch time | 4 | µs | |||
| tOCP | Overcurrent protection period | 1.35 | ms | |||
| tTSD | Thermal shutdown temperature | Die temperature | 150 | 160 | 180 | °C |
| CURRENT CONTROL | ||||||
| VTRIP | xISEN trip voltage | 160 | 200 | 240 | mV | |
| tBLANK | Current sense blanking time | 3.75 | µs | |||
| SLEEP MODE | ||||||
| tWAKE | Start-up time | nSLEEP inactive high to H-bridge on | 1 | ms | ||
(1) Internal dead time. External implementation is not necessary.
6.6 Typical Characteristics
