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SLVSA11G October 2009 – November 2015 DRV8828

PRODUCTION DATA.

封裝選項

機械數(shù)據(jù) (封裝 | 引腳)

PWP|28
- MPDS373B

散熱焊盤機械數(shù)據(jù) (封裝 | 引腳)

PWP|28
- PPTD156P

訂購信息

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) ⁽¹⁾⁽²⁾

		MIN	MAX	UNIT
VM	Power supply voltage	–0.3	47	V
	Digital pin voltage	–0.5	7	V
VREF	Input voltage	–0.3	4	V
	ISENSE pin voltage	–0.8	0.8⁽⁴⁾	V
	Peak motor drive output current, t < 1 μS	Internally limited		A
	Continuous motor drive output current⁽³⁾	0	3	A
	Continuous total power dissipation	See Thermal Information
T_J	Operating virtual junction temperature	–40	150	°C
T_stg	Storage temperature	–60	150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute–maximum–rated conditions for extended periods may affect device reliability.

(2) All voltage values are with respect to network ground pin.

(3) Power dissipation and thermal limits must be observed.

(4) Transients of +/- 1V for less than 25 ns are acceptable.

6.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾	±2000	V
V_(ESD)	Electrostatic discharge	Charged-device model (CDM), per JEDEC specification JESD22-C101⁽²⁾	±500	V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

		MIN	MAX	UNIT
V_M	Motor power supply voltage range⁽¹⁾	8.2	45	V
V_REF	VREF input voltage⁽²⁾	1	3.5	V
I_V3P3	V3P3OUT load current		1	mA

(1) All V_M pins must be connected to the same supply voltage.

(2) Operational at VREF between 0 V and 1 V, but accuracy is degraded.

6.4 Thermal Information

THERMAL METRIC⁽¹⁾		DRV8828	UNIT
		PWP (HTSSOP)
		28 PINS
R_θJA	Junction-to-ambient thermal resistance	38.9	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	23.3	°C/W
R_θJB	Junction-to-board thermal resistance	21.2	°C/W
ψ_JT	Junction-to-top characterization parameter	0.8	°C/W
ψ_JB	Junction-to-board characterization parameter	20.9	°C/W
R_θJC(bot)	Junction-to-case (bottom) thermal resistance	2.6	°C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

over operating free-air temperature range (unless otherwise noted)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
POWER SUPPLIES
I_VM	VM operating supply current	V_M = 24 V, f_PWM < 50 kHz		5	8	mA
I_VMQ	VM sleep mode supply current	V_M = 24 V		10	20	μA
V_UVLO	VM undervoltage lockout voltage	V_M rising		7.8	8.2	V
V3P3OUT REGULATOR
V_3P3	V3P3OUT voltage	IOUT = 0 to 1 mA, V_M = 24 V, T_J = 25°C	3.18	3.30	3.42	V
V_3P3	V3P3OUT voltage	IOUT = 0 to 1 mA	3.10	3.30	3.50	V
LOGIC-LEVEL INPUTS
V_IL	Input low voltage			0.6	0.7	V
V_IH	Input high voltage		2		5.25	V
V_HYS	Input hysteresis			0.45		V
I_IL	Input low current	VIN = 0	–20		20	μA
I_IH	Input high current	VIN = 3.3 V			100	μA
R_PD	Internal pulldown resistance	ENBL, PHASE, I0, I1, I2, I3, I4, nRESET		100		kΩ
R_PD	Internal pulldown resistance	nSLEEP		1		MΩ
nFAULT OUTPUT (OPEN-DRAIN OUTPUT)
V_OL	Output low voltage	I_O = 5 mA			0.5	V
I_OH	Output high leakage current	V_O = 3.3 V			1	μA
DECAY INPUT
V_IL	Input low threshold voltage	For slow decay mode			0.8	V
V_IH	Input high threshold voltage	For fast decay mode	2			V
I_IN	Input current		–100		100	µA
R_PU	Internal pullup resistance			130		kΩ
R_PD	Internal pulldown resistance			80		kΩ
H-BRIDGE FETS
R_DS(ON)	HS FET on resistance	V_M = 24 V, I _O = 1 A, T_J = 25°C		0.32		Ω
R_DS(ON)	HS FET on resistance	V_M = 24 V, I_O = 1 A, T_J = 85°C		0.39	0.45	Ω
R_DS(ON)	LS FET on resistance	V_M = 24 V, I_O = 1 A, T_J = 25°C		0.33		Ω
R_DS(ON)	LS FET on resistance	V_M = 24 V, I_O = 1 A, T_J = 85°C		0.39	0.45	Ω
I_OFF	Off-state leakage current		–40		40	μA
MOTOR DRIVER
f_PWM	PWM frequency			50		kHz
t_BLANK	Current sense blanking time			3.75		μs
t_R	Rise time	V_M = 24 V	100		360	ns
t_F	Fall time	V_M = 24 V	80		250	ns
t_DEAD	Dead time			400		ns
t_DEG	Input deglitch time		1.3		2.9	µs
PROTECTION CIRCUITS
I_OCP	Overcurrent protection trip level		3.6		10	A
t_TSD	Thermal shutdown temperature	Die temperature	150	160	180	°C
CURRENT CONTROL
I_REF	VREF input current	VREF = 3.3 V	–3		3	μA
V_TRIP	ISENSE trip voltage	VREF = 3.3 V, 100% current setting	635	660	685	mV
ΔI_TRIP	Current trip accuracy (relative to programmed value)	VREF = 3.3V , 5% current setting	–25%		25%
		VREF = 3.3V , 10% - 34% current setting	–15%		15%
		VREF = 3.3 V, 38% - 67% current setting	–10%		10%
		VREF = 3.3 V, 71% - 100% current setting	–5%		5%
A_ISENSE	Current sense amplifier gain	Reference only		5		V/V

6.6 Typical Characteristics

Figure 1. I_VMx vs V_(VMx)

Figure 3. R_DS(ON) vs V_(VMx)

Figure 2. I_VMxQ vs V_(VMx)

Figure 4. R_DS(ON) vs Temperature