ZHCSG01C February 2017 – August 2018 DRV8320 , DRV8320R , DRV8323 , DRV8323R
PRODUCTION DATA.
- 1 特性
- 2 應(yīng)用
- 3 說明
- 4 修訂歷史記錄
- 5 Device Comparison Table
- 6 Pin Configuration and Functions
- 7 Specifications
-
8 Detailed Description
- 8.1 Overview
- 8.2 Functional Block Diagram
- 8.3
Feature Description
- 8.3.1 Three Phase Smart Gate Drivers
- 8.3.2 DVDD Linear Voltage Regulator
- 8.3.3 Pin Diagrams
- 8.3.4 Low-Side Current Sense Amplifiers (DRV8323 and DRV8323R Only)
- 8.3.5 Step-Down Buck Regulator
- 8.3.6 Gate Driver Protective Circuits
- 8.4 Device Functional Modes
- 8.5 Programming
- 8.6
Register Maps
- Table 1. DRV832xS and DRV832xRS Register Map
- 8.6.1 Status Registers
- 8.6.2 Control Registers
-
9 Application and Implementation
- 9.1 Application Information
- 9.2
Typical Application
- 9.2.1
Primary Application
- 9.2.1.1 Design Requirements
- 9.2.1.2 Detailed Design Procedure
- 9.2.1.3 Application Curves
- 9.2.2 Alternative Application
- 9.2.1
Primary Application
- 10Power Supply Recommendations
- 11Layout
- 12器件和文檔支持
- 13機(jī)械、封裝和可訂購信息
封裝選項(xiàng)
機(jī)械數(shù)據(jù) (封裝 | 引腳)
- RTV|32
散熱焊盤機(jī)械數(shù)據(jù) (封裝 | 引腳)
- RTV|32
訂購信息
9.2.1.2.2 IDRIVE Configuration
The strength of the gate drive current, IDRIVE, is selected based on the gate-to-drain charge of the external MOSFETs and the target rise and fall times at the outputs. If IDRIVE is selected to be too low for a given MOSFET, then the MOSFET may not turn on completely within the tDRIVE time and a gate drive fault may be asserted. Additionally, slow rise and fall times result in higher switching power losses. TI recommends adjusting these values in the system with the required external MOSFETs and motor to determine the best possible setting for any application.
The IDRIVEP and IDRIVEN current for both the low-side and high-side MOSFETs are independently adjustable on SPI devices through the SPI registers. On hardware interface devices, both source and sink settings are selected at the same time on the IDRIVE pin.
For MOSFETs with a known gate-to-drain charge Qgd, desired rise time (tr), and a desired fall time (tf), use Equation 11 and Equation 12 to calculate the value of IDRIVEP and IDRIVEN (respectively).
