ZHCSG01C February 2017 – August 2018 DRV8320 , DRV8320R , DRV8323 , DRV8323R
PRODUCTION DATA.
- 1 特性
- 2 應用
- 3 說明
- 4 修訂歷史記錄
- 5 Device Comparison Table
- 6 Pin Configuration and Functions
- 7 Specifications
-
8 Detailed Description
- 8.1 Overview
- 8.2 Functional Block Diagram
- 8.3
Feature Description
- 8.3.1 Three Phase Smart Gate Drivers
- 8.3.2 DVDD Linear Voltage Regulator
- 8.3.3 Pin Diagrams
- 8.3.4 Low-Side Current Sense Amplifiers (DRV8323 and DRV8323R Only)
- 8.3.5 Step-Down Buck Regulator
- 8.3.6 Gate Driver Protective Circuits
- 8.4 Device Functional Modes
- 8.5 Programming
- 8.6
Register Maps
- Table 1. DRV832xS and DRV832xRS Register Map
- 8.6.1 Status Registers
- 8.6.2 Control Registers
-
9 Application and Implementation
- 9.1 Application Information
- 9.2
Typical Application
- 9.2.1
Primary Application
- 9.2.1.1 Design Requirements
- 9.2.1.2 Detailed Design Procedure
- 9.2.1.3 Application Curves
- 9.2.2 Alternative Application
- 9.2.1
Primary Application
- 10Power Supply Recommendations
- 11Layout
- 12器件和文檔支持
- 13機械、封裝和可訂購信息
9.2.1.2.2.1 Example
Use Equation 13 and Equation 14 to calculate the value of IDRIVEP1 and IDRIVEP2 (respectively) for a gate-to-drain charge of 14 nC and a rise time from 100 to 300 ns.
Equation 13. 
Equation 14. 
Select a value for IDRIVEP that is between 47 mA and 140 mA. For this example, the value of IDRIVEP was selected as 120-mA source.
Use Equation 15 and Equation 16 to calculate the value of IDRIVEN1 and IDRIVEN2 (respectively) for a gate-to-drain charge of 14 nC and a fall time from 50 to 150 ns.
Equation 15. 
Equation 16. 
Select a value for IDRIVEN that is between 93 mA and 280 mA. For this example, the value of IDRIVEN was selected as 240-mA sink.