ZHCSEF3G May 2014 – September 2016 DRV5023
PRODUCTION DATA.
Figure 25. SOT-23 (DBZ) 封裝
Figure 26. TO-92 (LPG) 封裝
表示霍爾效應(yīng)傳感器(未按比例顯示)。霍爾元件置于封裝中央位置,容差為 ±100μm。在 DBZ 封裝中,霍爾元件與封裝底部的距離為 0.7mm ± 50μm;在 LPG 封裝中,霍爾元件與封裝底部的距離為 0.987mm ± 50μm。如需接收文檔更新通知,請?jiān)L問 www.cqwzaes.cn 網(wǎng)站上的器件產(chǎn)品文件夾。點(diǎn)擊右上角的提醒我 (Alert me) 注冊后,即可每周定期收到已更改的產(chǎn)品信息。有關(guān)更改的詳細(xì)信息,請查閱已修訂文檔中包含的修訂歷史記錄。
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這些裝置包含有限的內(nèi)置 ESD 保護(hù)。 存儲(chǔ)或裝卸時(shí),應(yīng)將導(dǎo)線一起截短或?qū)⒀b置放置于導(dǎo)電泡棉中,以防止 MOS 門極遭受靜電損傷。
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.