ZHCSEF3G May 2014 – September 2016 DRV5023
PRODUCTION DATA.
11 器件和文檔支持
11.1 器件支持
11.1.2 器件標記
Figure 25. SOT-23 (DBZ) 封裝
Figure 26. TO-92 (LPG) 封裝
表示霍爾效應傳感器（未按比例顯示）。霍爾元件置于封裝中央位置，容差為 ±100μm。在 DBZ 封裝中，霍爾元件與封裝底部的距離為 0.7mm ± 50μm；在 LPG 封裝中，霍爾元件與封裝底部的距離為 0.987mm ± 50μm。11.2 接收文檔更新通知
如需接收文檔更新通知，請訪問 www.cqwzaes.cn 網站上的器件產品文件夾。點擊右上角的提醒我 (Alert me) 注冊后，即可每周定期收到已更改的產品信息。有關更改的詳細信息，請查閱已修訂文檔中包含的修訂歷史記錄。
11.3 社區資源
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use.
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TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers.
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Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support.
11.4 商標
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
11.5 靜電放電警告
這些裝置包含有限的內置 ESD 保護。 存儲或裝卸時，應將導線一起截短或將裝置放置于導電泡棉中，以防止 MOS 門極遭受靜電損傷。
11.6 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.