ZHCSEC9 November 2015 CSD25404Q3
PRODUCTION DATA.
封裝選項(xiàng)
請(qǐng)參考 PDF 數(shù)據(jù)表獲取器件具體的封裝圖。
機(jī)械數(shù)據(jù) (封裝 | 引腳)
- DQG|8
散熱焊盤機(jī)械數(shù)據(jù) (封裝 | 引腳)
訂購信息
5 Specifications
5.1 Electrical Characteristics
(TA = 25°C unless otherwise stated)| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
|---|---|---|---|---|---|---|---|
| STATIC CHARACTERISTICS | |||||||
| BVDSS | Drain-to-source voltage | VGS = 0 V, ID = –250 μA | –20 | V | |||
| IDSS | Drain-to-source leakage current | VGS = 0 V, VDS = –16 V | –1 | μA | |||
| IGSS | Gate-to-source leakage current | VDS = 0 V, VGS = ±12 V | –100 | nA | |||
| VGS(th) | Gate-to-source threshold voltage | VDS = VGS, ID = –250 μA | –0.65 | –0.90 | –1.15 | V | |
| RDS(on) | Drain-to-source on resistance | VGS = –1.8 V, ID = –1 A | 40 | 150 | mΩ | ||
| VGS = –2.5 V, ID = –10 A | 10.1 | 12.1 | mΩ | ||||
| VGS = –4.5 V, ID = –10 A | 5.5 | 6.5 | mΩ | ||||
| gfs | Transconductance | VDS = –10 V, ID = –10 A | 47 | S | |||
| DYNAMIC CHARACTERISTICS | |||||||
| CISS | Input capacitance | VGS = 0 V, VDS = –10 V, ƒ = 1 MHz |
1630 | 2120 | pF | ||
| COSS | Output capacitance | 902 | 1170 | pF | |||
| CRSS | Reverse transfer capacitance | 52 | 68 | pF | |||
| RG | Series gate resistance | 0.8 | 2.4 | Ω | |||
| Qg | Gate charge total (–4.5 V) | VDS = –10 V, ID = –10 A | 10.8 | 14.1 | nC | ||
| Qgd | Gate charge gate to drain | 2.2 | nC | ||||
| Qgs | Gate charge gate to source | 2.8 | nC | ||||
| Qg(th) | Gate charge at Vth | 1.5 | nC | ||||
| QOSS | Output charge | VDS = –10 V, VGS = 0 V | 9.0 | nC | |||
| td(on) | Turn on delay time | VDS = –10 V, VGS = –4.5 V, ID = –10 A , RG = 5 Ω |
13 | ns | |||
| tr | Rise time | 8 | ns | ||||
| td(off) | Turn off delay time | 35 | ns | ||||
| tf | Fall time | 13 | ns | ||||
| DIODE CHARACTERISTICS | |||||||
| VSD | Diode forward voltage | IS = –10 A, VGS = 0 V | –0.8 | –1 | V | ||
| Qrr | Reverse recovery charge | VDS = –10 V, IF = –10 A, di/dt = 200 A/μs |
20.5 | nC | |||
| trr | Reverse recovery time | 26 | ns | ||||
5.2 Thermal Information
(TA = 25°C unless otherwise stated)| THERMAL METRIC | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|
| RθJC | Junction-to-case thermal resistance(1) | 1.3 | °C/W | ||
| RθJA | Junction-to-ambient thermal resistance(1)(2) | 55 | °C/W | ||
(1) RθJC is determined with the device mounted on a 1 inch2 (6.45 cm2), 2 oz. (0.071 mm thick) Cu pad on a 1.5 inch × 1.5 inch (3.81 cm × 3.81 cm), 0.06 inch (1.52 mm) thick FR4 PCB. RθJC is specified by design, whereas RθJA is determined by the user’s board design.
(2) Device mounted on FR4 material with 1 inch2 (6.45 cm2), 2 oz. (0.071 mm thick) Cu.
 |
Max RθJA = 55°C/W when mounted on 1 inch2 of 2 oz. Cu. |
 |
Max RθJA = 160°C/W when mounted on minimum pad area of 2 oz. Cu. |
5.3 Typical MOSFET Characteristics
(TA = 25°C unless otherwise stated)
| ID = –10 A | VDS = –10 V |
| ID = –250 µA |
| ID = –10 A |
| Single Pulse, Max RθJC = 1.3 °C/W |
| VDS = –5 V |
