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ZHCSCK4A June 2014 – July 2014 CSD25202W15

PRODUCTION DATA.

5 Specifications

(T_A = 25°C unless otherwise stated)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
STATIC CHARACTERISTICS
BV_DSS	Drain-to-Source Voltage	V_GS = 0 V, I_DS = –250 μA	–20			V
BV_GSS	Gate-to-Source Voltage	V_DS = 0 V, I_G = –250 μA	–6		–7.2	V
I_DDS	Drain-to-Source Leakage Current	V_GS = 0 V, V_DS = –16 V			–1	μA
I_GSS	Gate-to-Source Leakage Current	V_DS = 0 V, V_GS = –6 V			–100	nA
V_GS(th)	Gate-to-Source Threshold Voltage	V_DS = V_GS, I_DS = –250 μA	–0.45	–0.75	–1.05	V
R_DS(on)	Drain-to-Source On Resistance	V_GS = –1.8 V, I_DS = –2 A		40	52	mΩ
		V_GS = –2.5 V, I_DS = –2 A		26	32	mΩ
		V_GS = –4.5 V, I_DS = –2 A		21	26	mΩ
g_ƒs	Transconductance	V_DS = –2 V, I_DS = –2 A		16		S
DYNAMIC CHARACTERISTICS
C_ISS	Input Capacitance	V_GS = 0 V, V_DS = –10 V, ƒ = 1 MHz		778	1010	pF
C_OSS	Output Capacitance			400	520	pF
C_RSS	Reverse Transfer Capacitance			21	27	pF
R_G	Series Gate Resistance⁽¹⁾			31		Ω
Q_g	Gate Charge Total (–4.5 V)	V_DS = –10 V, I_D = –2 A		5.8	7.5	nC
Q_gd	Gate Charge - Gate-to-Drain			0.8		nC
Q_gs	Gate Charge - Gate-to-Source			1.1		nC
Q_g(th)	Gate Charge at V_th			0.6		nC
Q_OSS	Output Charge	V_DS = –9.5 V, V_GS = 0 V		8.7		nC
t_d(on)	Turn On Delay Time⁽²⁾	V_DS = –10 V, V_GS = –4.5 V, I_DS = –2 A, R_G = 2 Ω		15		ns
t_r	Rise Time⁽²⁾			12		ns
t_d(off)	Turn Off Delay Time⁽²⁾			64		ns
t_f	Fall Time⁽²⁾			28		ns
DIODE CHARACTERISTICS
V_SD	Diode Forward Voltage	I_DS = –2 A, V_GS = 0 V		–0.75	–1	V
Q_rr	Reverse Recovery Charge	V_SD= –10 V, I_F = –2 A, di/dt = 200 A/μs		19		nC
t_rr	Reverse Recovery Time	V_SD= –10 V, I_F = –2 A, di/dt = 200 A/μs		26		ns

(1) Includes gate clamp resistor

(2) External R_G is in addition to the internal gate clamp resistor

(T_A = 25°C unless otherwise stated)

THERMAL METRIC		MIN	TYP	MAX	UNIT
R_θJA	Junction-to-Ambient Thermal Resistance⁽¹⁾		220		°C/W
R_θJA	Junction-to-Ambient Thermal Resistance⁽²⁾		140		°C/W

(1) Device mounted on FR4 material with minimum Cu mounting area.

(2) Device mounted on FR4 material with 1-inch² (6.45-cm²), 2-oz. (0.071-mm thick) Cu.

Typ R_θJA = 140°C/W when mounted on 1 inch² (6.45 cm²) of
2-oz. (0.071-mm thick) Cu.

Typ R_θJA = 220°C/W when mounted on a minimum pad area of 2-oz. (0.071-mm thick) Cu.

(T_A = 25°C unless otherwise stated)

Figure 1. Transient Thermal Impedance

Figure 2. Saturation Characteristics

I_D = –2 A		V_DS = –10 V

Figure 4. Gate Charge

	I_D = –250 µA

Figure 6. Threshold Voltage vs Temperature

	I_D = –2 A

Figure 8. Normalized On-State Resistance vs Temperature

Single Pulse, Max R_θJA = 220°C/W

Figure 10. Maximum Safe Operating Area

	V_DS = –5 V

Figure 3. Transfer Characteristics

Figure 5. Capacitance

Figure 7. On-State Resistance vs Gate-to-Source Voltage

Figure 9. Typical Diode Forward Voltage

Figure 11. Maximum Drain Current vs Temperature