4 修訂歷史記錄
Changes from C Revision (September 2013) to D Revision
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Added ESD 額定值表，特性 描述 部分，器件功能模式，應用和實施部分，電源相關建議部分，布局部分，器件和文檔支持部分以及機械、封裝和可訂購信息部分Go
Changes from B Revision (August 2012) to C Revision
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Deleted 器件圖Go
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Added DWV (SOIC-9) 封裝至文檔Go
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Changed 部分的最后一段Go
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Added DWV pin out drawingGo
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Added DWV column to Thermal Information tableGo
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Added row for DWV package to L(I01) and L(I02) parameters in Package Characteristics tableGo
Changes from A Revision (August 2011) to B Revision
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已更改隔離電壓特性著重號Go
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Added AMC1200B 器件至數據表Go
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Changed title for Figure 25Go
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Changed CTI parameter minimum value in Electrical Characteristics from ≥ 175 to ≥ 400Go
Changes from * Revision (April 2011) to A Revision
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Changed sign for maximum junction temperature from minus to plus (typo)Go
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Added "0.5-V step" to test condition for Rise/fall time parameterGo
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Changed Figure 12Go
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Changed Figure 13Go
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Changed surge immunity parameter from ±4000 to ±6000Go