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SBASB17B October 2024 – October 2025 AMC0381D-Q1

PRODMIX

封裝選項

機械數據 (封裝 | 引腳)

DFX|15
- MPSS195

散熱焊盤機械數據 (封裝 | 引腳)

訂購信息

6.9 Electrical Characteristics

minimum and maximum specifications apply from T_A = –40°C to +125°C, VDD1 = 3.0V to 5.5V, VDD2 = 3.0V to 5.5V, V_SNSP = 0V to +1V, and V_SNSN = 0V; typical specifications are at T_A = 25°C, VDD1 = 5V, VDD2 = 3.3V (unless otherwise noted)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
ANALOG INPUT
R_IN	Input resistance	AMC0381D06-Q1	8.5	10	11.5	M?
		AMC0381D10-Q1	10.6	12.5	14.4
		AMC0381D16-Q1	28	33.5	39
	Resistive divider ratio	V_HVIN / V_SNSP, AMC0381D06-Q1	598	601	604	V/V
		V_HVIN / V_SNSP, AMC0381D10-Q1	996	1001	1006
		V_HVIN / V_SNSP, AMC0381D16-Q1	1596	1601	1606
CMTI	Common-mode transient immunity	SNSP = GND1	150			V/ns
ANALOG OUTPUT
	Nominal attenuation	(V_OUTP – V_OUTN) / V_HVIN, AMC0381D06-Q1		3.328		mV/V
		(V_OUTP – V_OUTN) / V_HVIN, AMC0381D10-Q1		1.998
		(V_OUTP – V_OUTN) / V_HVIN, AMC0381D16-Q1		1.249
V_CMout	Output common-mode voltage		1.39	1.44	1.50	V
V_CLIPout	Clipping differential output voltage	V_OUT = (V_OUTP – V_OUTN); V_IN > V_Clipping	–2.52	±2.49	2.52	V
V_FAILSAFE	Failsafe differential output voltage	VDD1 undervoltage, or VDD1 missing	–2.63	–2.57	–2.53	V
R_OUT	Output resistance	OUTP or OUTN		<0.2		Ω
	Output short-circuit current	On OUTP or OUTN, sourcing or sinking, HVIN = GND1, outputs shorted to either GND or VDD2		11		mA
DC ACCURACY
V_OS	Input offset voltage	Referred to SNSP, T_A = 25°C, HVIN = GND1	–0.8	±0.1	0.8	mV
		Referred to HVIN, HVIN = GND1, T_A = 25°C, AMC0381D06-Q1	–480	±60	480
		Referred to HVIN, HVIN = GND1, T_A = 25°C, AMC0381D10-Q1	–800	±100	800
		Referred to HVIN, HVIN = GND1, T_A = 25°C, AMC0381D16-Q1	–1280	±160	1280
TCV_OS	Input offset thermal drift⁽³⁾	Referred to SNSP, HVIN = GND1	–0.01	±0.003	0.01	mV/°C
		Referred to HVIN, HVIN = GND1, AMC0381D06-Q1	–6	±1.8	6
		Referred to HVIN, HVIN = GND1, AMC0381D10-Q1	–10	±3	10
		Referred to HVIN, HVIN = GND1, AMC0381D16-Q1	–16	±4.8	16
E_A	Attenuation error⁽¹⁾	T_A = 25°C	–0.25%	±0.05%	0.25%
TCE_A	Attenuation error temperature drift⁽⁴⁾		–40	±20	40	ppm/°C
	Nonlinearity⁽²⁾		–0.025%	±0.01%	0.025%
	Output noise	V_IN = GND1, BW = 50kHz		200		μVrms
PSRR	Power-supply rejection ratio⁽⁵⁾	VDD1 DC PSRR, HVIN = GND1, VDD1 from 3V to 5.5V		–77		dB
		VDD1 AC PSRR, HVIN = GND1, VDD1 with 10kHz / 100mV ripple		–49
		VDD2 DC PSRR, HVIN = GND1, VDD2 from 3V to 5.5V		–100
		VDD2 AC PSRR, HVIN = GND1, VDD2 with 10kHz / 100mV ripple		–75
AC ACCURACY
BW	Output bandwidth		120	145		kHz
THD	Total harmonic distortion	V_SNSP = 1V_PP, SNSN = GND1, f_IN = 10kHz		–80	–73	dB
SNR	Signal-to-noise ratio	V_SNSP = 1V_PP, SNSN = GND1, f_IN = 1kHz, BW = 10kHz	75	79		dB
SNR	Signal-to-noise ratio	V_SNSP = 1V_PP, SNSN = GND1, f_IN = 10kHz, BW = 50kHz		70		dB
POWER SUPPLY
I_DD1	High-side supply current			4.3	5.6	mA
I_DD2	Low-side supply current			6.2	9.7	mA
VDD1_UV	High-side undervoltage detection threshold	VDD1 rising	2.5	2.6	2.7	V
VDD1_UV	High-side undervoltage detection threshold	VDD1 falling	1.9	2.0	2.1	V
VDD2_UV	Low-side undervoltage detection threshold	VDD2 rising	2.3	2.5	2.7	V
VDD2_UV	Low-side undervoltage detection threshold	VDD2 falling	1.9	2.05	2.2	V

(1) The typical value includes one sigma statistical variation.

(2) Integral nonlinearity is defined as the maximum deviation from a straight line passing through the end-points of the ideal ADC transfer
function expressed as number of LSBs or as a percent of the specified linear full-scale range FSR.

(3) Offset error drift is calculated using the box method, as described by the following equation:
TCE_O = (value_MAX - value_MIN) / TempRange

(4) Attenuation error drift is calculated using the box method, as described by the following equation:
TCE_A (ppm) = ((value_MAX - value_MIN) / (value x TempRange)) X 10⁶

(5) This parameter is referred to SNSP.