產品詳情

Protocols Composite, RGB Configuration 2:1 SPDT Number of channels 4 Bandwidth (MHz) 300 Supply voltage (max) (V) 3.6 Supply voltage (min) (V) 3 Ron (typ) (mΩ) 5000 Input/output voltage (min) (V) 0 Input/output voltage (max) (V) 3.6 Supply current (typ) (μA) 10 ESD HBM (typ) (kV) 2 Operating temperature range (°C) -40 to 85 Crosstalk (dB) -80 ESD CDM (kV) 1 Input/output continuous current (max) (mA) 128 COFF (typ) (pF) 10 CON (typ) (pF) 17 Off isolation (typ) (dB) -50 OFF-state leakage current (max) (μA) 1 Propagation delay time (μs) 0.0025 Ron (max) (mΩ) 10000 Turnoff time (disable) (max) (ns) 3.5 Turnon time (enable) (max) (ns) 6.5 VIH (min) (V) 2 VIL (max) (V) 0.8 Rating Catalog
Protocols Composite, RGB Configuration 2:1 SPDT Number of channels 4 Bandwidth (MHz) 300 Supply voltage (max) (V) 3.6 Supply voltage (min) (V) 3 Ron (typ) (mΩ) 5000 Input/output voltage (min) (V) 0 Input/output voltage (max) (V) 3.6 Supply current (typ) (μA) 10 ESD HBM (typ) (kV) 2 Operating temperature range (°C) -40 to 85 Crosstalk (dB) -80 ESD CDM (kV) 1 Input/output continuous current (max) (mA) 128 COFF (typ) (pF) 10 CON (typ) (pF) 17 Off isolation (typ) (dB) -50 OFF-state leakage current (max) (μA) 1 Propagation delay time (μs) 0.0025 Ron (max) (mΩ) 10000 Turnoff time (disable) (max) (ns) 3.5 Turnon time (enable) (max) (ns) 6.5 VIH (min) (V) 2 VIL (max) (V) 0.8 Rating Catalog
SOIC (D) 16 59.4 mm2 9.9 x 6 SSOP (DBQ) 16 29.4 mm2 4.9 x 6 TSSOP (PW) 16 32 mm2 5 x 6.4 TVSOP (DGV) 16 23.04 mm2 3.6 x 6.4 VQFN (RGY) 16 14 mm2 4 x 3.5
  • Low Differential Gain and Phase (DG = 0.82%, DP = 0.1 Degree Typ)
  • Wide Bandwidth (BW = 300 MHz Min)
  • Low Crosstalk (XTALK = -80 dB Typ)
  • Low Power Consumption (ICC = 10 μA Max)
  • Bidirectional Data Flow With Near-Zero Propagation Delay
  • Low ON-State Resistance (ron = 3 Typ)
  • Rail-to-Rail Switching on Data I/O Ports (0 to VCC)
  • VCC Operating Range From 3 V to 3.6 V
  • Ioff Supports Partial-Power-Down Mode Operation
  • Data and Control Inputs Provide Undershoot Clamp Diode
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 2000-V Human-Body Model (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • Suitable for Both RGB and Composite-Video Switching

  • Low Differential Gain and Phase (DG = 0.82%, DP = 0.1 Degree Typ)
  • Wide Bandwidth (BW = 300 MHz Min)
  • Low Crosstalk (XTALK = -80 dB Typ)
  • Low Power Consumption (ICC = 10 μA Max)
  • Bidirectional Data Flow With Near-Zero Propagation Delay
  • Low ON-State Resistance (ron = 3 Typ)
  • Rail-to-Rail Switching on Data I/O Ports (0 to VCC)
  • VCC Operating Range From 3 V to 3.6 V
  • Ioff Supports Partial-Power-Down Mode Operation
  • Data and Control Inputs Provide Undershoot Clamp Diode
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 2000-V Human-Body Model (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • Suitable for Both RGB and Composite-Video Switching

The TS3V330 video switch is a 4-bit 1-of-2 multiplexer/demultiplexer, with a single switch-enable (EN) input. When EN is low, the switch is enabled and the D port is connected to the S port. When EN is high, the switch is disabled and the high-impedance state exists between the D and S ports. The select (IN) input controls the data path of the multiplexer/demultiplexer.

Low differential gain and phase make this switch ideal for composite and RGB video applications. This device has wide bandwidth and low crosstalk, making it suitable for high-frequency applications as well.

This device is fully specified for partial-power-down applications using Ioff. The Ioff feature ensures that damaging current will not backflow through the device when it is powered down. This switch maintains isolation during power off.

To ensure the high-impedance state during power up or power down, EN should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

The TS3V330 video switch is a 4-bit 1-of-2 multiplexer/demultiplexer, with a single switch-enable (EN) input. When EN is low, the switch is enabled and the D port is connected to the S port. When EN is high, the switch is disabled and the high-impedance state exists between the D and S ports. The select (IN) input controls the data path of the multiplexer/demultiplexer.

Low differential gain and phase make this switch ideal for composite and RGB video applications. This device has wide bandwidth and low crosstalk, making it suitable for high-frequency applications as well.

This device is fully specified for partial-power-down applications using Ioff. The Ioff feature ensures that damaging current will not backflow through the device when it is powered down. This switch maintains isolation during power off.

To ensure the high-impedance state during power up or power down, EN should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

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類型 標題 下載最新的英語版本 日期
* 數據表 TS3V330 數據表 (Rev. C) 2005年 7月 11日

設計和開發

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接口適配器

LEADED-ADAPTER1 — 表面貼裝轉 DIP 接頭適配器,用于快速測試 TI 的 5、8、10、16 和 24 引腳引線式封裝。

EVM-LEADED1 電路板可用于對 TI 的常見引線式封裝進行快速測試和電路板試驗。? 該電路板具有足夠的空間,可將 TI 的 D、DBQ、DCT、DCU、DDF、DGS、DGV 和 PW 表面貼裝封裝轉換為 100mil DIP 接頭。?????

用戶指南: PDF
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接口適配器

LEADLESS-ADAPTER1 — 表面貼裝轉 DIP 接頭適配器,用于測試 TI 的 6、8、10、12、14、16 和 20 引腳無引線封裝

EVM-LEADLESS1 板可用于對 TI 的常見無引線封裝進行快速測試和電路板試驗。? 該評估板有足夠的空間,可將 TI 的 DRC、DTP、DQE、RBW、RGY、RSE、RSV、RSW RTE、RTJ、RUK、RUC、RUG、RUM、RUT 和 YZP 表面貼裝封裝轉為 100mil DIP 接頭。
用戶指南: PDF
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參考設計

TIDA-00232 — 無線超低音放大器參考設計

此無線超低音放大器參考設計展示了將無線連接集成到傳統模擬輸入超低音設計的簡易性。由 MSP430 控制有線或無線模式。此參考設計包含具有用于監控和控制的高性能立體聲數字音頻放大器系統。此設計包含用于在無線模式實現音頻流的 CC8520 PurePath 音頻無線射頻 SoC 模塊。提供了參考設計中使用的電路板和 EVM 的原理圖、物料清單和設計注意事項。
測試報告: PDF
原理圖: PDF
封裝 引腳 CAD 符號、封裝和 3D 模型
SOIC (D) 16 Ultra Librarian
SSOP (DBQ) 16 Ultra Librarian
TSSOP (PW) 16 Ultra Librarian
TVSOP (DGV) 16 Ultra Librarian
VQFN (RGY) 16 Ultra Librarian

訂購和質量

包含信息:
  • RoHS
  • REACH
  • 器件標識
  • 引腳鍍層/焊球材料
  • MSL 等級/回流焊峰值溫度
  • MTBF/時基故障估算
  • 材料成分
  • 鑒定摘要
  • 持續可靠性監測
包含信息:
  • 制造廠地點
  • 封裝廠地點

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