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TPSI2240-Q1

預發(fā)布

具有增強隔離和雪崩防護功能的汽車級 1200V、50mA 隔離開關

產(chǎn)品詳情

FET Internal Number of channels 1 Supply voltage (min) (V) 4.5 Supply voltage (max) (V) 20 Rating Automotive Features 1mA avalanche current, Capacitive isolation Withstand isolation voltage (VISO) (Vrms) 4750 Imax (mA) 50 Ron (typ) (Ω) 130 TI functional safety category Functional Safety-Capable Operating temperature range (°C) -40 to 125 OFF-state leakage current (μA) 3.5 Isolation rating Reinforced Surge isolation voltage (VIOSM) (VPK) 10000 Working isolation voltage (VIOWM) (Vrms) 1000
FET Internal Number of channels 1 Supply voltage (min) (V) 4.5 Supply voltage (max) (V) 20 Rating Automotive Features 1mA avalanche current, Capacitive isolation Withstand isolation voltage (VISO) (Vrms) 4750 Imax (mA) 50 Ron (typ) (Ω) 130 TI functional safety category Functional Safety-Capable Operating temperature range (°C) -40 to 125 OFF-state leakage current (μA) 3.5 Isolation rating Reinforced Surge isolation voltage (VIOSM) (VPK) 10000 Working isolation voltage (VIOWM) (Vrms) 1000
SOIC (DWQ) 11 106.09 mm2 10.3 x 10.3
  • Qualified for automotive applications
    • AEC-Q100 grade 1: –40 to 125°C TA
  • Low EMI:
    • Meets CISPR25 class 5 performance with no additional components
  • Integrated avalanche rated MOSFETs
    • Designed and qualified for reliability for dielectric withstand testing (Hi-Pot)
      • TPSI2240-Q1 IAVA = 1mA for 60s pulses
      • TPSI2240T-Q1 IAVA = 3mA for 60s pulses
    • 1200V standoff voltage
    • RON = 130Ω (TJ = 25°C)
    • TON, TOFF < 700μs
    • IOFF = 1.22μA at 1000V (TJ = 105°C)
  • Low primary side supply current
    • 5mA ON state current
    • 3.5μA OFF state current (TJ = 25°C)
  • Functional Safety Capable
  • Robust isolation barrier:
    • > 30 year projected lifetime at 1000VRMS / 1500VDC working voltage
    • Reinforced Isolation rating, VISO, up to 3750VRMS
  • SOIC 11-pin (DWQ) package with wide pins for improved thermal performance
    • Creepage and clearance ≥ 8mm (primary-secondary)
    • Creepage and clearance ≥ 6mm (across switch terminals)
  • Safety-related certifications
    • (Planned) DIN EN IEC 60747-17 (VDE 0884-17)
    • (Planned) UL 1577 component recognition program
  • Qualified for automotive applications
    • AEC-Q100 grade 1: –40 to 125°C TA
  • Low EMI:
    • Meets CISPR25 class 5 performance with no additional components
  • Integrated avalanche rated MOSFETs
    • Designed and qualified for reliability for dielectric withstand testing (Hi-Pot)
      • TPSI2240-Q1 IAVA = 1mA for 60s pulses
      • TPSI2240T-Q1 IAVA = 3mA for 60s pulses
    • 1200V standoff voltage
    • RON = 130Ω (TJ = 25°C)
    • TON, TOFF < 700μs
    • IOFF = 1.22μA at 1000V (TJ = 105°C)
  • Low primary side supply current
    • 5mA ON state current
    • 3.5μA OFF state current (TJ = 25°C)
  • Functional Safety Capable
  • Robust isolation barrier:
    • > 30 year projected lifetime at 1000VRMS / 1500VDC working voltage
    • Reinforced Isolation rating, VISO, up to 3750VRMS
  • SOIC 11-pin (DWQ) package with wide pins for improved thermal performance
    • Creepage and clearance ≥ 8mm (primary-secondary)
    • Creepage and clearance ≥ 6mm (across switch terminals)
  • Safety-related certifications
    • (Planned) DIN EN IEC 60747-17 (VDE 0884-17)
    • (Planned) UL 1577 component recognition program

The TPSI2240-Q1 is an isolated solid state relay designed for high voltage automotive and industrial applications. The TPSI2240-Q1 uses TI’s high reliability capacitive reinforced isolation technology in combination with internal back-to-back MOSFETs to form an integrated solution requiring no secondary side power supply.

The primary side of the device is powered by only 5mA of input current and incorporates a fail-safe EN pin preventing any possibility of back powering the VDD supply. In most applications, the VDD pin of the device should be connected to a system supply between 5V – 20V and the EN pin of the device should be driven by a GPIO output with logic HI between 2.1V – 20V. In other applications, The VDD and EN pins could be driven together directly from the system supply or from a GPIO output. All control configurations of the TPSI2240-Q1 do not require additional external components such as a resistor and/or low side switch that are typically required in photo relay solutions.

The secondary side consists of back-to-back MOSFETs with a standoff voltage of ±1.2kV from S1 to S2. The TPSI2240-Q1 MOSFET’s avalanche robustness and thermally conscious package design, allow it to robustly support system level dielectric withstand testing (HiPot) and DC fast charger surge currents of up to 1mA without requiring any external components.

The TPSI2240-Q1 is an isolated solid state relay designed for high voltage automotive and industrial applications. The TPSI2240-Q1 uses TI’s high reliability capacitive reinforced isolation technology in combination with internal back-to-back MOSFETs to form an integrated solution requiring no secondary side power supply.

The primary side of the device is powered by only 5mA of input current and incorporates a fail-safe EN pin preventing any possibility of back powering the VDD supply. In most applications, the VDD pin of the device should be connected to a system supply between 5V – 20V and the EN pin of the device should be driven by a GPIO output with logic HI between 2.1V – 20V. In other applications, The VDD and EN pins could be driven together directly from the system supply or from a GPIO output. All control configurations of the TPSI2240-Q1 do not require additional external components such as a resistor and/or low side switch that are typically required in photo relay solutions.

The secondary side consists of back-to-back MOSFETs with a standoff voltage of ±1.2kV from S1 to S2. The TPSI2240-Q1 MOSFET’s avalanche robustness and thermally conscious package design, allow it to robustly support system level dielectric withstand testing (HiPot) and DC fast charger surge currents of up to 1mA without requiring any external components.

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* 數(shù)據(jù)表 TPSI2240-Q1 1200V, 50mA, Automotive Reinforced Solid-State Relay With Avalanche Protection 數(shù)據(jù)表 PDF | HTML 2025年 9月 26日
EVM 用戶指南 TPSI2240-Q1 評估模塊 PDF | HTML 英語版 PDF | HTML 2025年 10月 23日
證書 TPSI2240Q1EVM EU Declaration of Conformity (DoC) 2025年 7月 1日

設計和開發(fā)

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評估板

TPSI2240Q1EVM — TPSI2240-Q1 評估模塊

TPSI2240Q1EVM 是包含多個測試點和跳線的硬件評估模塊 (EVM),用于評估 TPSI2240-Q1 的性能和功能。該評估模塊包含測試和評估 TPSI2240-Q1 器件所需的材料,以便將器件無縫設計到更大的應用中,如電池管理系統(tǒng)。TPSI2240Q1EVM 可單獨使用,也可選擇與外部微控制器配對使用,用于驅(qū)動器件的使能信號。使用該 EVM 可以評估電介質(zhì)耐壓測試(又稱高電勢 (HiPot) 測試)和直流快充浪涌電流等應用需求,且無需外部保護元件。此 EVM 組裝了采用 SOIC 封裝的 TPSI2240-Q1。
用戶指南: PDF | HTML
英語版: PDF | HTML
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SOIC (DWQ) 11 Ultra Librarian

訂購和質(zhì)量

包含信息:
  • RoHS
  • REACH
  • 器件標識
  • 引腳鍍層/焊球材料
  • MSL 等級/回流焊峰值溫度
  • MTBF/時基故障估算
  • 材料成分
  • 鑒定摘要
  • 持續(xù)可靠性監(jiān)測
包含信息:
  • 制造廠地點
  • 封裝廠地點

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