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TPD4E05U06 正在供貨 適用于 USB、HDMI 和高速接口的四通道 0.5pF、5.5V、±12kV ESD 保護二極管 Lower capacitance and clamping voltage intended for use on high speed data lines

產品詳情

Number of channels 4 Vrwm (V) 5.5 Bi-/uni-directional Uni-Directional Package name DFN2510 Peak pulse power (8/20 μs) (max) (W) 25 IO capacitance (typ) (pF) 0.8 IEC 61000-4-2 contact (±V) 8000 IEC 61000-4-5 (A) 2.5 Clamping voltage (V) 20 Dynamic resistance (typ) 1.1 Interface type Ethernet, HDMI 1.4/1.3, LVDS, SATA/PCIe, USB 2.0 Breakdown voltage (min) (V) 9 IO leakage current (max) (nA) 100 Rating Catalog Operating temperature range (°C) -40 to 85
Number of channels 4 Vrwm (V) 5.5 Bi-/uni-directional Uni-Directional Package name DFN2510 Peak pulse power (8/20 μs) (max) (W) 25 IO capacitance (typ) (pF) 0.8 IEC 61000-4-2 contact (±V) 8000 IEC 61000-4-5 (A) 2.5 Clamping voltage (V) 20 Dynamic resistance (typ) 1.1 Interface type Ethernet, HDMI 1.4/1.3, LVDS, SATA/PCIe, USB 2.0 Breakdown voltage (min) (V) 9 IO leakage current (max) (nA) 100 Rating Catalog Operating temperature range (°C) -40 to 85
USON (DQA) 10 2.5 mm2 2.5 x 1
  • IEC 61000-4-2 Level 4 ESD Protection
    • ±8-kV Contact Discharge
  • IEC 61000-4-5 Surge Protection
    • 2.5A (8/20μs)
  • I/O Capacitance: 0.8 pF (Typical)
  • Low Leakage Current: 10 nA (Typical)
  • Supports High-Speed Differential Data Rates
    (3-dB Bandwidth > 4 GHz)
  • Ultra-low Matching Capacitance Between
    Differential Signal Pairs
  • Ioff Feature for the TPD4S009
  • Industrial Temperature Range:
    –40°C to 85°C
  • Easy Straight through Routing, Space-Saving
    Package Options
  • IEC 61000-4-2 Level 4 ESD Protection
    • ±8-kV Contact Discharge
  • IEC 61000-4-5 Surge Protection
    • 2.5A (8/20μs)
  • I/O Capacitance: 0.8 pF (Typical)
  • Low Leakage Current: 10 nA (Typical)
  • Supports High-Speed Differential Data Rates
    (3-dB Bandwidth > 4 GHz)
  • Ultra-low Matching Capacitance Between
    Differential Signal Pairs
  • Ioff Feature for the TPD4S009
  • Industrial Temperature Range:
    –40°C to 85°C
  • Easy Straight through Routing, Space-Saving
    Package Options

The TPD4S009 and TPD4S010 are four-channel TVS diode arrays for electrostatic discharge (ESD) protection. TPD4S009 and TPD4S010 are rated to dissipate contact ESD strikes at the maximum level specified in the IEC 61000-4-2 international standard (Level 4), with ±8-kV contact discharge ESD protection. The low capacitance (0.8-pF) of these devices, coupled with the excellent matching between differential signal pairs (0.05-pF line-line capacitance for the TPD4S009DRY) enables this device to provide transient voltage suppression circuit protection for high-speed differential data rates (3-dB bandwidth > 4 GHz).

The TPD4S009 is offered in DBV, DCK, DGS, and DRY packages. The TPD4S009DRYR is the most space saving package option available for dual pair high-speed differential lines. The TPD4S010 is offered in the industry standard DQA package. The TPD4S009DGSR and TPD4S010DQAR offer flow-through board layout options to reduce signal glitches normally caused by routing mismatches between the D+ and D– signal pair. See also TPD4E05U06DQAR which is P2P compatible with TPD4S010DQAR. This device offers higher IEC ESD protection, lower capacitance, lower RDYN, lower DC breakdown voltage, and lower clamping voltage.

The TPD4S009 and TPD4S010 are four-channel TVS diode arrays for electrostatic discharge (ESD) protection. TPD4S009 and TPD4S010 are rated to dissipate contact ESD strikes at the maximum level specified in the IEC 61000-4-2 international standard (Level 4), with ±8-kV contact discharge ESD protection. The low capacitance (0.8-pF) of these devices, coupled with the excellent matching between differential signal pairs (0.05-pF line-line capacitance for the TPD4S009DRY) enables this device to provide transient voltage suppression circuit protection for high-speed differential data rates (3-dB bandwidth > 4 GHz).

The TPD4S009 is offered in DBV, DCK, DGS, and DRY packages. The TPD4S009DRYR is the most space saving package option available for dual pair high-speed differential lines. The TPD4S010 is offered in the industry standard DQA package. The TPD4S009DGSR and TPD4S010DQAR offer flow-through board layout options to reduce signal glitches normally caused by routing mismatches between the D+ and D– signal pair. See also TPD4E05U06DQAR which is P2P compatible with TPD4S010DQAR. This device offers higher IEC ESD protection, lower capacitance, lower RDYN, lower DC breakdown voltage, and lower clamping voltage.

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類型 標題 下載最新的英語版本 日期
* 數據表 TPD4S009 4-Channel ESD Solution for High-Speed Differential Interface 數據表 (Rev. G) PDF | HTML 2015年 6月 26日
選擇指南 System-Level ESD Protection Guide (Rev. E) 2025年 8月 5日
用戶指南 閱讀并了解 ESD 保護數據表 (Rev. A) PDF | HTML 英語版 (Rev.A) PDF | HTML 2023年 9月 22日
應用手冊 ESD 保護布局指南 (Rev. A) PDF | HTML 英語版 (Rev.A) PDF | HTML 2022年 7月 25日
白皮書 Designing USB for short-to-battery tolerance in automotive environments 2016年 2月 10日

設計和開發

如需其他信息或資源,請點擊以下任一標題進入詳情頁面查看(如有)。

評估板

DRV8353RH-EVM — DRV8353RH 三相無刷直流智能柵極驅動器評估模塊

DRV8353RH-EVM 是基于 DRV8353RH 柵極驅動器和 CSD19532Q5B NexFET? MOSFET 的 15A 三相無刷直流驅動級。

該模塊具有單獨的直流母線和相電壓感應以及單獨的低側電流分流放大器,因此該評估模塊非常適合無傳感器 BLDC 算法。? 該模塊借助集成式 0.35A 降壓穩壓器為 MCU 提供 3.3V 電源。? 驅動級具有 IDRIVE 配置、故障引腳,以及通過易于配置的硬件接口(由特定電阻值組成)實現的短路、熱、交叉導通和欠壓等條件的保護功能。

用戶指南: PDF
評估板

DRV8353RS-EVM — DRV8353RS 三相無刷直流智能柵極驅動器評估模塊?

DRV8353RS-EVM 是基于 DRV8353RS 柵極驅動器和 CSD19532Q5B NexFET? MOSFET 的 15A 三相無刷直流驅動級。

該模塊具有單獨的直流母線和相電壓感應以及單獨的低側電流分流放大器,因此該評估模塊非常適合無傳感器 BLDC 算法。? 該模塊借助集成式 0.35A 降壓穩壓器為 MCU 提供 3.3V 電源。? 該驅動級具有 IDRIVE 配置和故障引腳,還可以通過可配置 SPI 防止出現短路、過熱,擊穿和欠壓等狀況。

用戶指南: PDF
TI.com 上無現貨
評估板

ESDEVM — 適用于 ESD 二極管封裝(包括 0402、0201 等)的通用評估模塊

靜電敏感器件 (ESD) 評估模塊 (EVM) 是用于 TI 大部分 ESD 產品系列的開發平臺。為了測試任何型號的器件,該電路板支持所有傳統的 ESD 封裝結構。器件可以焊接到相應封裝結構,然后進行測試。如果是典型的高速 ESD 二極管,則應采用阻抗受控布局來獲取 S 參數并剝離電路板引線。如果是非高速 ESD 二極管,則應采用有布線連接到測試點的封裝結構,以便輕松運行直流測試,例如擊穿電壓、保持電壓、漏電流等。該電路板布局布線還可以通過將信號引腳短接至信號所在的位置,輕松地將任何器件引腳連接到電源 (VCC) 或地。
用戶指南: PDF | HTML
TI.com 上無現貨
封裝 引腳 CAD 符號、封裝和 3D 模型
USON (DQA) 10 Ultra Librarian

訂購和質量

包含信息:
  • RoHS
  • REACH
  • 器件標識
  • 引腳鍍層/焊球材料
  • MSL 等級/回流焊峰值溫度
  • MTBF/時基故障估算
  • 材料成分
  • 鑒定摘要
  • 持續可靠性監測
包含信息:
  • 制造廠地點
  • 封裝廠地點

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