SN74HC10-EP
- Controlled Baseline
- One Assembly/Test Site, One Fabrication Site
- Extended Temperature Performance of –40°C to 125°C
- Enhanced Diminishing Manufacturing Sources (DMS) Support
- Enhanced Product-Change Notification
- Qualification Pedigree

- Wide Operating Voltage Range of 2 V to 6 V
- Outputs Can Drive Up To 10 LSTTL Loads
- Low Power Consumption, 20-μA Max ICC
- Typical tpd = 9 ns
- ±4-mA Output Drive at 5 V
- Low Input Current of 1 μA Max
Component qualification in accordance with JEDEC and industry standards to ensure reliable operation over an extended temperature range. This includes, but is not limited to, Highly Accelerated Stress Test (HAST) or biased 85/85, temperature cycle, autoclave or unbiased HAST, electromigration, bond intermetallic life, and mold compound life. Such qualification testing should not be viewed as justifying use of this component beyond specified performance and environmental limits.
The SN74HC10 device contains three independent 3-input NAND gates. It performs the Boolean function Y = (A B C)\ or Y = A\ + B\ + C\ in positive logic.
技術(shù)文檔
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查看全部 1 | 頂層文檔 | 類型 | 標(biāo)題 | 格式選項(xiàng) | 下載最新的英語(yǔ)版本 | 日期 | |
|---|---|---|---|---|---|---|
| * | 數(shù)據(jù)表 | SN74HC10-EP 數(shù)據(jù)表 | 2004年 1月 6日 |
訂購(gòu)和質(zhì)量
包含信息:
- RoHS
- REACH
- 器件標(biāo)識(shí)
- 引腳鍍層/焊球材料
- MSL 等級(jí)/回流焊峰值溫度
- MTBF/時(shí)基故障估算
- 材料成分
- 鑒定摘要
- 持續(xù)可靠性監(jiān)測(cè)
包含信息:
- 制造廠地點(diǎn)
- 封裝廠地點(diǎn)