SN74CB3T1G125
- Output Voltage Translation Tracks VCC
- Supports Mixed-Mode Signal Operation on All Data I/O Ports
- 5-V Input Down to 3.3-V Output Level Shift With 3.3-V VCC
- 5-V/3.3-V Input Down to 2.5-V Output Level Shift With 2.5-V VCC
- 5-V-Tolerant I/Os, With Device Powered Up or Powered Down
- Bidirectional Data Flow With Near-Zero Propagation Delay
- Low ON-State Resistance (ron) Characteristics (ron = 5
Typ) - Low Input/Output Capacitance Minimizes Loading (Cio(OFF) = 5 pF Typ)
- Data and Control Inputs Provide Undershoot Clamp Diodes
- Low Power Consumption (ICC = 20 μA Max)
- VCC Operating Range From 2.3 V to 3.6 V
- Data I/Os Support 0- to 5-V Signaling Levels (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V)
- Control Inputs Can Be Driven by TTL or 5-V/3.3-V CMOS Outputs
- Ioff Supports Partial-Power-Down Mode Operation
- Latch-Up Performance Exceeds 250 mA Per JESD 17
- ESD Performance Tested Per JESD 22
- 2000-V Human-Body Model (A114-B, Class II)
- 1000-V Charged-Device Model (C101)
- Supports Digital Applications: Level Translation, USB Interface, Bus Isolation
- Ideal for Low-Power Portable Equipment
The SN74CB3T1G125 is a high-speed TTL-compatible FET bus switch with low ON-state resistance (ron), allowing for minimal propagation delay. The device fully supports mixed-mode signal operation on all data I/O ports by providing voltage translation that tracks VCC. The SN74CB3T1G125 supports systems using 5-V TTL, 3.3-V LVTTL, and 2.5-V CMOS switching standards, as well as user-defined switching levels.
The SN74CB3T1G125 is a 1-bit bus switch with a single ouput-enable (OE) input. When OE is low, the bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is high, the bus switch is OFF, and a high-impedance state exists between the A and B ports.
This device is fully specified for partial-power-down applications using Ioff. The Ioff feature ensures that damaging current will not backflow through the device when it is powered down. The device has isolation during power off.
To ensure the high-impedance state during power up or power down, OE should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.
技術文檔
設計和開發
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借助 DIP-Adapter-EVM 加快運算放大器的原型設計和測試,該 EVM 有助于快速輕松地連接小型表面貼裝 IC 并且價格低廉。您可以使用隨附的 Samtec 端子板連接任何受支持的運算放大器,或者將這些端子板直接連接至現有電路。
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訂購和質量
- RoHS
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- 器件標識
- 引腳鍍層/焊球材料
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- MTBF/時基故障估算
- 材料成分
- 鑒定摘要
- 持續可靠性監測
- 制造廠地點
- 封裝廠地點
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