SN54LS26-SP

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航天類 4 通道、2 輸入、4.5V 至 5.5V 雙極與非門

產(chǎn)品詳情

Technology family LS Supply voltage (min) (V) 4.5 Supply voltage (max) (V) 5.5 Number of channels 4 Inputs per channel 2 IOL (max) (mA) 0 IOH (max) (mA) -8 Input type Bipolar Output type Push-Pull Features High speed (tpd 10- 50ns) Data rate (max) (Mbps) 35 Rating Space Operating temperature range (°C) -55 to 125
Technology family LS Supply voltage (min) (V) 4.5 Supply voltage (max) (V) 5.5 Number of channels 4 Inputs per channel 2 IOL (max) (mA) 0 IOH (max) (mA) -8 Input type Bipolar Output type Push-Pull Features High speed (tpd 10- 50ns) Data rate (max) (Mbps) 35 Rating Space Operating temperature range (°C) -55 to 125
CFP (W) 14 58.023 mm2 9.21 x 6.3
  • For Driving Low-Threshold-Voltage MOS Inputs

 
  • For Driving Low-Threshold-Voltage MOS Inputs

 

These 2-input open-collector NAND gates feature high-output voltage ratings for interfacing with low-threshold-voltage MOS logic circuits or other 12-volt systems. Although the output is rated to withstand 15 volts, the VCC terminal is connected to the standard 5-volt source.

The SN5426 and SN54LS26 are characterized for operation over the full military temperature range of -55°C to 125°C. The SN7426 and SN74LS26 are characterized for operation from 0°C to 70°C.

 

These 2-input open-collector NAND gates feature high-output voltage ratings for interfacing with low-threshold-voltage MOS logic circuits or other 12-volt systems. Although the output is rated to withstand 15 volts, the VCC terminal is connected to the standard 5-volt source.

The SN5426 and SN54LS26 are characterized for operation over the full military temperature range of -55°C to 125°C. The SN7426 and SN74LS26 are characterized for operation from 0°C to 70°C.

 
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類型 標(biāo)題 下載最新的英語版本 日期
* 數(shù)據(jù)表 Quadruple 2-Input High-Voltage Interface Positive-NAND Gates 數(shù)據(jù)表 1988年 3月 1日

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包含信息：
  • RoHS
  • REACH
  • 器件標(biāo)識
  • 引腳鍍層/焊球材料
  • MSL 等級/回流焊峰值溫度
  • MTBF/時基故障估算
  • 材料成分
  • 鑒定摘要
  • 持續(xù)可靠性監(jiān)測
包含信息：
  • 制造廠地點
  • 封裝廠地點

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