主頁(yè) 電源管理 電源開(kāi)關(guān) 電子保險(xiǎn)絲和熱插拔控制器

LM9061

正在供貨

7V 至 26V 高側(cè)保護(hù)控制器

產(chǎn)品詳情

FET External Vabsmax_cont (V) 60 Vin (max) (V) 26 Vin (min) (V) 7 Current limit (min) (A) 0.01 Overcurrent response Circuit breaker, Current limiting Fault response Latch-off Overvoltage response Cut-off Rating Catalog Soft start Adjustable Function Inductive load compatibility, Overvoltage protection Quiescent current (Iq) (typ) (A) 0.005 Quiescent current (Iq) (max) (A) 0.005 Device type eFuses and hot swap controllers Operating temperature range (°C) -40 to 125
FET External Vabsmax_cont (V) 60 Vin (max) (V) 26 Vin (min) (V) 7 Current limit (min) (A) 0.01 Overcurrent response Circuit breaker, Current limiting Fault response Latch-off Overvoltage response Cut-off Rating Catalog Soft start Adjustable Function Inductive load compatibility, Overvoltage protection Quiescent current (Iq) (typ) (A) 0.005 Quiescent current (Iq) (max) (A) 0.005 Device type eFuses and hot swap controllers Operating temperature range (°C) -40 to 125
SOIC (D) 8 29.4 mm2 4.9 x 6
  • Qualified for Automotive Applications
  • AEC-Q100 Qualified With the Following Results:
    • Device HBM ESD Classification Level 2
    • Device CDM ESD Classification Level C4B
  • Withstands 60-V Supply Transients
  • Overvoltage Shut-OFF With VCC > 30 V
  • Lossless Overcurrent Protection Latch-OFF
    • Current Sense Resistor is Not Required
    • Minimizes Power Loss With High Current Loads
  • Programmable Delay of Protection Latch-OFF
  • Gradual Turnoff to Minimize Inductive Load Transient Voltages
  • CMOS Logic-Compatible ON and OFF Control Input
  • Qualified for Automotive Applications
  • AEC-Q100 Qualified With the Following Results:
    • Device HBM ESD Classification Level 2
    • Device CDM ESD Classification Level C4B
  • Withstands 60-V Supply Transients
  • Overvoltage Shut-OFF With VCC > 30 V
  • Lossless Overcurrent Protection Latch-OFF
    • Current Sense Resistor is Not Required
    • Minimizes Power Loss With High Current Loads
  • Programmable Delay of Protection Latch-OFF
  • Gradual Turnoff to Minimize Inductive Load Transient Voltages
  • CMOS Logic-Compatible ON and OFF Control Input

The LM9061 family consists of charge-pump devices which provides the gate drive to an external power MOSFET of any size configured as a high-side driver or switch. This includes multiple parallel connected MOSFETs for very high current applications. A CMOS logic-compatible ON and OFF input controls the output gate drive voltage. In the ON state, the charge pump voltage, which is well above the available VCC supply, is directly applied to the gate of the MOSFET. A built-in 15-V Zener clamps the maximum gate to source voltage of the MOSFET. When commanded OFF a 110-µA current sink discharges the gate capacitances of the MOSFET for a gradual turnoff characteristic to minimize the duration of inductive load transient voltages and further protect the power MOSFET.

Lossless protection of the power MOSFET is a key feature of the LM9061. The voltage drop (VDS) across the power device is continually monitored and compared against an externally programmable threshold voltage. A small current-sensing resistor in series with the load, which causes a loss of available energy, is not required for the protection circuitry. If the VDS voltage, due to excessive load current, exceeds the threshold voltage, the output is latched OFF in a more gradual fashion (through a 10-µA output current sink) after a programmable delay time interval.

The LM9061 family consists of charge-pump devices which provides the gate drive to an external power MOSFET of any size configured as a high-side driver or switch. This includes multiple parallel connected MOSFETs for very high current applications. A CMOS logic-compatible ON and OFF input controls the output gate drive voltage. In the ON state, the charge pump voltage, which is well above the available VCC supply, is directly applied to the gate of the MOSFET. A built-in 15-V Zener clamps the maximum gate to source voltage of the MOSFET. When commanded OFF a 110-µA current sink discharges the gate capacitances of the MOSFET for a gradual turnoff characteristic to minimize the duration of inductive load transient voltages and further protect the power MOSFET.

Lossless protection of the power MOSFET is a key feature of the LM9061. The voltage drop (VDS) across the power device is continually monitored and compared against an externally programmable threshold voltage. A small current-sensing resistor in series with the load, which causes a loss of available energy, is not required for the protection circuitry. If the VDS voltage, due to excessive load current, exceeds the threshold voltage, the output is latched OFF in a more gradual fashion (through a 10-µA output current sink) after a programmable delay time interval.

下載 觀看帶字幕的視頻 視頻

技術(shù)文檔

star =有關(guān)此產(chǎn)品的 TI 精選熱門(mén)文檔
未找到結(jié)果。請(qǐng)清除搜索并重試。
查看全部 3
類型 標(biāo)題 下載最新的英語(yǔ)版本 日期
* 數(shù)據(jù)表 LM9061 and LM9061-Q1 High-Side Protection Controller 數(shù)據(jù)表 (Rev. I) PDF | HTML 2017年 1月 4日
電子書(shū) 11 Ways to Protect Your Power Path 2019年 7月 3日
EVM 用戶指南 LM9061 High-Side Protection Controller EVM 2014年 11月 7日

設(shè)計(jì)和開(kāi)發(fā)

如需其他信息或資源,請(qǐng)點(diǎn)擊以下任一標(biāo)題進(jìn)入詳情頁(yè)面查看(如有)。

評(píng)估板

LM9061EVM — LM9061EVM 高側(cè)保護(hù)控制器評(píng)估模塊

LM9061EVM 評(píng)估模塊演示的是接電負(fù)載的高側(cè)保護(hù),用于防護(hù)過(guò)流和過(guò)壓的情況。高側(cè) MOSFET 的柵極驅(qū)動(dòng)由一個(gè)開(kāi)/關(guān)輸入控制。過(guò)流保護(hù)會(huì)在從 MOSFET 中監(jiān)測(cè)到壓降 (VDS) 時(shí)啟用,壓降參考的是外部可編程閾值電壓。如果 VDS 電壓因過(guò)高的負(fù)載電流而超出閾值電壓,MOSFET 的柵極驅(qū)動(dòng)就會(huì)關(guān)閉,從而斷開(kāi)負(fù)載與輸入電源的連接。與負(fù)載串聯(lián)的電流感應(yīng)電阻器并非保護(hù)電路所必需,這樣可以在較高的電流負(fù)載下獲得更高的性能。

用戶指南: PDF
TI.com 上無(wú)現(xiàn)貨
計(jì)算工具

TVS-RECOMMENDATION-CALC TVS diode recommendation tool

This tool suggests suitable TVS for given system parameters and abs max voltage rating of the device.
支持的產(chǎn)品和硬件

支持的產(chǎn)品和硬件

此設(shè)計(jì)資源支持這些類別中的大部分產(chǎn)品。

查看產(chǎn)品詳情頁(yè),驗(yàn)證是否能提供支持。

模擬工具

PSPICE-FOR-TI — PSpice? for TI 設(shè)計(jì)和仿真工具

PSpice? for TI 可提供幫助評(píng)估模擬電路功能的設(shè)計(jì)和仿真環(huán)境。此功能齊全的設(shè)計(jì)和仿真套件使用 Cadence? 的模擬分析引擎。PSpice for TI 可免費(fèi)使用,包括業(yè)內(nèi)超大的模型庫(kù)之一,涵蓋我們的模擬和電源產(chǎn)品系列以及精選的模擬行為模型。

借助?PSpice for TI 的設(shè)計(jì)和仿真環(huán)境及其內(nèi)置的模型庫(kù),您可對(duì)復(fù)雜的混合信號(hào)設(shè)計(jì)進(jìn)行仿真。創(chuàng)建完整的終端設(shè)備設(shè)計(jì)和原型解決方案,然后再進(jìn)行布局和制造,可縮短產(chǎn)品上市時(shí)間并降低開(kāi)發(fā)成本。?

在?PSpice for TI 設(shè)計(jì)和仿真工具中,您可以搜索 TI (...)
參考設(shè)計(jì)

TIDA-00296 — 汽車車身控制模塊驅(qū)動(dòng)器參考設(shè)計(jì)

TIDA-00296 是一項(xiàng)重點(diǎn)介紹 TI 高側(cè)和低側(cè)繼電器、電機(jī)以及負(fù)載驅(qū)動(dòng)器產(chǎn)品系列的參考設(shè)計(jì)。我們選擇了針對(duì)該設(shè)計(jì)的負(fù)載(門(mén)鎖、車窗升降電機(jī)、座椅加熱器、HVAC、車燈和 LED)來(lái)展示 BCM 可驅(qū)動(dòng)的負(fù)載范圍以及 TI 解決方案如何滿足這些領(lǐng)域。
測(cè)試報(bào)告: PDF
原理圖: PDF
封裝 引腳 CAD 符號(hào)、封裝和 3D 模型
SOIC (D) 8 Ultra Librarian

訂購(gòu)和質(zhì)量

包含信息:
  • RoHS
  • REACH
  • 器件標(biāo)識(shí)
  • 引腳鍍層/焊球材料
  • MSL 等級(jí)/回流焊峰值溫度
  • MTBF/時(shí)基故障估算
  • 材料成分
  • 鑒定摘要
  • 持續(xù)可靠性監(jiān)測(cè)
包含信息:
  • 制造廠地點(diǎn)
  • 封裝廠地點(diǎn)

推薦產(chǎn)品可能包含與 TI 此產(chǎn)品相關(guān)的參數(shù)、評(píng)估模塊或參考設(shè)計(jì)。

支持和培訓(xùn)

可獲得 TI 工程師技術(shù)支持的 TI E2E? 論壇

所有內(nèi)容均由 TI 和社區(qū)貢獻(xiàn)者按“原樣”提供,并不構(gòu)成 TI 規(guī)范。請(qǐng)參閱使用條款

如果您對(duì)質(zhì)量、包裝或訂購(gòu) TI 產(chǎn)品有疑問(wèn),請(qǐng)參閱 TI 支持。??????????????

視頻