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LM5112-Q1

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具有 4V UVLO 和專用輸入接地的汽車類 7A/3A 單通道柵極驅動器

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UCC27614-Q1 正在供貨 具有 4V UVLO、30V VDD 和低傳播延遲的汽車級 10A/10A 單通道柵極驅動器 More recent driver with wide VDD and small package options

產品詳情

Number of channels 1 Power switch MOSFET Peak output current (A) 7 Input supply voltage (min) (V) 3.5 Input supply voltage (max) (V) 14 Features Negative Output Voltage Capability Operating temperature range (°C) -40 to 125 Rise time (ns) 14 Fall time (ns) 12 Propagation delay time (μs) 0.025 Input threshold TTL Channel input logic Inverting, Non-Inverting Input negative voltage (V) 0 Rating Automotive Undervoltage lockout (typ) (V) 3 Driver configuration Single
Number of channels 1 Power switch MOSFET Peak output current (A) 7 Input supply voltage (min) (V) 3.5 Input supply voltage (max) (V) 14 Features Negative Output Voltage Capability Operating temperature range (°C) -40 to 125 Rise time (ns) 14 Fall time (ns) 12 Propagation delay time (μs) 0.025 Input threshold TTL Channel input logic Inverting, Non-Inverting Input negative voltage (V) 0 Rating Automotive Undervoltage lockout (typ) (V) 3 Driver configuration Single
WSON (NGG) 6 9 mm2 3 x 3
  • LM5112-Q1 is Qualified for Automotive Applications
  • AEC-Q100 Grade 1 Qualified
  • Manufactured on an Automotive Grade Flow
  • Compound CMOS and Bipolar Outputs Reduce Output Current Variation
  • 7-A Sink and 3-A Source Current
  • Fast Propagation Times: 25 ns (Typical)
  • Fast Rise and Fall Times: 14 ns or 12 ns
    Rise or Fall With 2-nF Load
  • Inverting and Non-Inverting Inputs Provide Either Configuration With a Single Device
  • Supply Rail Undervoltage Lockout Protection
  • Dedicated Input Ground (IN_REF) for
    Split Supply or Single Supply Operation
  • Power Enhanced 6-Pin WSON Package
    (3 mm × 3 mm) or Thermally Enhanced
    MSOP-PowerPAD Package
  • Output Swings From VCC to VEE Which Are Negative Relative to Input Ground
  • LM5112-Q1 is Qualified for Automotive Applications
  • AEC-Q100 Grade 1 Qualified
  • Manufactured on an Automotive Grade Flow
  • Compound CMOS and Bipolar Outputs Reduce Output Current Variation
  • 7-A Sink and 3-A Source Current
  • Fast Propagation Times: 25 ns (Typical)
  • Fast Rise and Fall Times: 14 ns or 12 ns
    Rise or Fall With 2-nF Load
  • Inverting and Non-Inverting Inputs Provide Either Configuration With a Single Device
  • Supply Rail Undervoltage Lockout Protection
  • Dedicated Input Ground (IN_REF) for
    Split Supply or Single Supply Operation
  • Power Enhanced 6-Pin WSON Package
    (3 mm × 3 mm) or Thermally Enhanced
    MSOP-PowerPAD Package
  • Output Swings From VCC to VEE Which Are Negative Relative to Input Ground

The LM5112 device MOSFET gate driver provides high peak gate drive current in the tiny 6-pin WSON package (SOT-23 equivalent footprint) or an 8-pin exposed-pad MSOP package with improved power dissipation required for high frequency operation. The compound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 7 A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Undervoltage lockout protection is provided to prevent damage to the MOSFET due to insufficient gate turnon voltage. The LM5112 device provides both inverting and non-inverting inputs to satisfy requirements for inverting and non-inverting gate drive with a single device type.

The LM5112 device MOSFET gate driver provides high peak gate drive current in the tiny 6-pin WSON package (SOT-23 equivalent footprint) or an 8-pin exposed-pad MSOP package with improved power dissipation required for high frequency operation. The compound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 7 A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Undervoltage lockout protection is provided to prevent damage to the MOSFET due to insufficient gate turnon voltage. The LM5112 device provides both inverting and non-inverting inputs to satisfy requirements for inverting and non-inverting gate drive with a single device type.
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類型 標題 下載最新的英語版本 日期
* 數據表 LM5112, LM5112-Q1 Tiny 7-A MOSFET Gate Driver 數據表 (Rev. C) PDF | HTML 2015年 10月 22日
應用簡報 了解峰值源電流和灌電流 (Rev. A) 英語版 (Rev.A) 2020年 4月 29日
應用簡報 適用于柵極驅動器的外部柵極電阻器設計指南 (Rev. A) 英語版 (Rev.A) 2020年 4月 29日
應用簡報 How to overcome negative voltage transients on low-side gate drivers' inputs 2019年 1月 18日
更多文獻資料 Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) 2018年 10月 29日
更多文獻資料 MOSFET 和 IGBT 柵極驅動器電路的基本原理 最新英語版本 (Rev.A) 2018年 4月 17日
應用簡報 Low-Side Gate Drivers With UVLO Versus BJT Totem-Pole 2018年 3月 16日
應用手冊 An Alternative Approach to Higher-Power Boost Converters 2009年 11月 30日

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