1 Features

• Low-Cost Gate-Driver Device Offering Superior Replacement of NPN and PNP Discrete Solutions
• 4-A Peak-Source and Sink Symmetrical Drive
• Ability to Handle Negative Voltages (-5 V) at Inputs
• Fast Propagation Delays (13-ns typical)
• Fast Rise and Fall Times (9-ns and 7-ns typical)
• 4.5 to 18-V Single-Supply Range
• Outputs Held Low During VDD UVLO (ensures glitch-free operation at power up and power down)
• TTL and CMOS Compatible Input-Logic Threshold (independent of supply voltage)
• Hysteretic-Logic Thresholds for High-Noise Immunity
• Dual Input Design (choice of an inverting (IN- pin) or non-inverting (IN+ pin) driver configuration)
  • Unused Input Pin can be Used for Enable or Disable Function
• Output Held Low when Input Pins are Floating
• Input Pin Absolute Maximum Voltage Levels Not Restricted by VDD Pin Bias Supply Voltage
• Operating Temperature Range of –40°C to +140°C
• 5-Pin DBV (SOT-23) Package Option

2 Applications

• Switch-Mode Power Supplies
• DC-to-DC Converters
• Companion Gate-Driver Devices for Digital-Power Controllers
• Solar Power, Motor Control, UPS
• Gate Driver for Emerging Wide Band-Gap Power Devices (such as GaN)

3 Description

The UCC27517A single-channel, high-speed, low-side gate driver device is capable of effectively driving MOSFET and IGBT power switches. Using a design that inherently minimizes shoot-through current, the UCC27517A is capable of sourcing and sinking high peak-current pulses into capacitive loads offering rail-to-rail drive capability and extremely small propagation delay typically 13 ns.

The UCC27517A device is capable of handling –5 V at input.

The UCC27517A provides 4-A source and 4-A sink (symmetrical drive) peak-drive current capability at VDD = 12 V.

The UCC27517A is designed to operate over a wide VDD range of 4.5 V to 18 V and wide temperature range of –40°C to 140°C. Internal Undervoltage Lockout (UVLO) circuitry on VDD pin holds output low outside VDD operating range. The capability to operate at low voltage levels such as below 5 V, along with best-in-class switching characteristics, is especially suited for driving emerging wide band-gap power-switching devices such as GaN power semiconductor devices.

1. For all available packages, see the orderable addendum at the end of the data sheet.

Typical Application Diagrams