During SEB/SEGR testing, the device was tested at room temperature. The same test conditions, in terms of biasing and voltage levels, apply for SEB/SEGR as was used during the SEL testing. In the case of the SEB/SEGR the device was tested in the following state machine states:

• Waiting to Sequence UP
  • All outputs are low (EN_X = LOW, SEQ_DONE = LOW, and PWRGD = LOW)
  • The device is waiting for a rising edge in UP to start the sequence up.
  • VUP = 0V (only difference from the SEL biasing)
• Waiting to Sequence DOWN
  • All outputs are high (EN_X = HIGH, SEQ_DONE = HIGH, and PWRGD = HIGH)
  • The device is waiting for a falling edge on DOWN to start a sequence down.

For more configuration information, please refer to Table 6-1.

The results for ten runs across five devices for SEB_X are shown in Table 8-3. During the testing of the 5 production devices and 10 SEB/SEGR runs, there were no SEB/SEGR events observed, indicating the TPS7H3014-SEP is SEB/SEGR free at 48 MeV·cm²/mg. Typical V_IN current vs time plots for SEB/SEGR on and off runs are shown in Figure 7-2 and Figure 7-3.

Using the MFTF method described in Single-Event Effects (SEE) Confidence Interval Calculations application report, the upper-bound cross-section (using a 95% confidence level) is calculated as:

σ_SEB ≤ 3.69 × 10^–8 cm²/device for LET_EFF = 48 MeV·cm²/mg and T = 25°C.

On refers to the Waiting to Sequence DOWN state.

Figure 7-2 Current versus Time for I_IN: SEB On Run #4

Off refers to the Waiting to Sequence UP state.

Figure 7-3 Current versus Time for I_IN: SEB Off Run #5