SLVK183 February 2025 TPS7H6005-SP , TPS7H6015-SP , TPS7H6025-SP
The TPS7H60x5-SP is a radiation-hardness-assured (RHA) Gallium Nitride (GaN) Field Effect Transistor (FET) gate driver designed for high frequency, high efficiency applications. The driver features:
In IIM mode the user also has the ability to enable or disable the turn-on of both outputs when both inputs are on simultaneously (interlock protection). This gives the driver the ability to be used in multiple converter configurations.
The device is offered in a 56-pin plastic package. General device information and test conditions are listed in Table 1-1. For more detailed technical specifications, user guides, and application notes, see the TPS7H6005-SP, the TPS7H6015-SP, or the TPS7H6025-SP product pages.
| Description (1) | Device Information |
|---|---|
| TI part number | TPS7H6005-SP, TPS7H6015-SP, TPS7H6025-SP |
| Orderable number | 5962R2220104PYE, 5962R2220105PYE, 5962R2220106PYE |
| Device function | 200, 60, or 22V half-bridge eGaN gate driver |
| Technology | LBC7 (Linear BiCMOS 7) |
| Exposure facility | Radiation Effects Facility, Cyclotron Institute, Texas A&M University (15 MeV / nucleon) |
| Heavy ion fluence per run | 9.97 × 106 – 1 × 107 ions / cm2 |
| Irradiation temperature | 25°C (for SEB/SEGR testing), 25°C (for SET testing), and 125°C (for SEL testing) |