SLVK179 September 2024 TPS7H1121-SP
1.2 Device Details
Table 1-1 lists the device information used in the initial NDD characterization.
Table 1-1 Device and Exposure Details
| NDD Exposure Details | |
|---|---|
| TI Device | TPS7H1121-SP |
| TI Part Name | 5962R2320301VXC |
Package | 22-pin CFP (HFT) |
| Technology | Linear BiCMOS (LBC7) |
| Lot Number / Date Code | 4002887 / 2424A |
Sample Quantity | 9 +4 correlation units |
Exposure Facility | Fast Neutron Irradiation (FNI) Facility of University of Massachusetts Lowell Research Reactor (UMLRR) |
| Neutron Fluence (1-MeV equivalent) Level | 1 × 1012, 5 × 1012, 1 × 1013 n/cm2 |
| Irradiation Temperature | Ambient room temperature (25oC) |
Figure 1-1 TPS7H1121-SP Device Used In Exposure