1 Introduction

The TPS7H60X3-SP is a radiation-hardness-assured (RHA) Gallium Nitride (GaN) Field Effect Transistor (FET) gate driver designed for high frequency, high efficiency applications. The driver features:

• Absolute Maximum Voltage ratings
  • TPS7H6003-SP: 200V
  • TPS7H6013-SP: 60V
  • TPS7H6023-SP: 22V
• Adjustable dead time (PWM mode)
• Approximately 30ns propagation delay
• Approximately 5.5ns high-side and low-side matching
• High-side and low-side 5V LDOs independent of supply voltage
• Two control input modes: Independent Input Mode (IIM) and PWM
  • IIM allows for outputs to be controlled by dedicated input
  • PWM allows for two complementary outputs signals to be generated from single input with resistor programmable dead-time

In IIM mode the user also has the ability to enable or disable the turn-on of both outputs when both inputs are on simultaneously (interlock protection). This gives the driver the ability to be used in multiple converter configurations.

The device is offered in a 48-pin ceramic package. General device information and test conditions are listed in Table 1-1. For more detailed technical specifications, user guides, and application notes, see the TPS7H6003-SP, the TPS7H6013-SP, or the TPS7H6023-SP product pages.