SLVK038A October 2020 – December 2024 TPS73801-SEP
The following is the device qualification summary:
Qualification by Similarity (Qualification Family)
A new device can be qualified either by performing full scale quality and reliability tests on the actual device or using previously qualified devices through Qualification by Similarity (QBS) rules. By establishing similarity between the new device and those qualified previously, repetitive tests will be eliminated, allowing for timely production release. When adopting QBS methodology, the emphasis is on qualifying the differences between a previously qualified product and the new product under consideration.
The QBS rules for a technology, product, test parameters or package shall define which attributes are required to remain fixed in order for the QBS rules to apply. The attributes which are expected and allowed to vary will be reviewed and a QBS plan shall be developed, based on the reliability impact assessment above, specifying what subset of the full complement of environmental stresses is required to evaluate the reliability impact of those variations. Each new device shall be reviewed for conformance to the QBS rule sets applicable to that device. See JEDEC JESD47 for more information.
| TI Device: | TPS73801MDCQTPSEP/ TPS73801MDCQPSEP | Assembly Site: | HNA (Thailand) | |
|---|---|---|---|---|
| DLA VID: | V62/18616 | Test Site: | HNA (Thailand) | |
| Wafer Fab: | SFAB | Pin/Package Type: | 6 / DCQ (SOT-223) | |
| Fab Process: | JI1-LIN-90 | Leadframe: | Cu | |
| Fab Technology: | JI1 | Termination Finish: | NiPdAuAg | |
| Die Revision: | D | Bond Wire: | 50.8 UM (Au) | |
| Die Name: | STLADJC1963DPS | Moisture Sensitivity: | MSL 2 / 260C | |
| ESD CDM: | ±1000V | |||
| ESD HBM: | ±2000V | |||
| 1Baseline information in effect as of the date of this report | ||||
| Note that qualification by similarity (“qualification family”) per JEDEC JESD47 is allowed | ||||
|---|---|---|---|---|
| Description | Condition | Sample Size Used/Rejects | Lots Required | Test Method |
| Electromigration | Maximum Recommended Operating Conditions | N/A | N/A | Per TI Design Rules |
| Wire Bond Life | Maximum Recommended Operating Conditions | N/A | N/A | Per TI Design Rules |
| Electrical Characterization | TI Data Sheet | 10 | 3 | N/A |
| Electrostatic Discharge Sensitivity | HBM | 3 units/voltage | 1 | EIA/JESD22-A114 |
| CDM | EIA/JESD22-C101 | |||
| Latch-up | Per Technology | 6/0 | 1 | EIA/JESD78 |
| Physical Dimensions | TI Data Sheet | 5/0 | 1 | EIA/JESD22- B100 |
| Thermal Impedance | Theta-JA on board | Per Pin-Package | N/A | EIA/JESD51 |
| Bias Life Test | 125°C / 1000 hours or equivalent | 77/0 | 3 | JESD22-A108* |
| Biased HAST | 130°C / 85% / 96 hours | 77/0 | 3 | JESD22-A110* |
| Extended Biased HAST | 130°C / 85% / 250 hours (for reference) | 77/0 | 1 | JESD22-A110* |
| Unbiased HAST | 130°C / 85% / 96 hours | 77/0 | 3 | JESD22-A.118* |
| Temperature Cycle | -65°C to +150°C non-biased for 500 cycles | 77/0 | 3 | JESD22-A104* |
| Solder Heat | 260°C for 10 seconds | 22/0 | 1 | JESD22-B106 |
| Resistance to Solvents | Ink symbol only | 12/0 | 1 | JESD22-B107 |
| Solderability | Condition A (steam age for 8 hours) | 22/0 | 1 | ANSI/J-STD-002-92 |
| Flammability | Method A / Method B | 5/0 | 1 | UL-1964 |
| Bond Shear | Per wire size | 5 units × 30/0 bonds | 3 | JESD22-B116 |
| Bond Pull Strength | Per wire size | 5 units × 30/0 bonds | 3 | ASTM F-459 |
| Die Shear | Per die size | 5/0 | 3 | TM 2019 |
| High Temperature Storage | 150 °C / 1000 hours | 15/0 | 3 | JESD22-A103-A* |
| Moisture Sensitivity | Surface Mount Only | 12 | 1 | J-STD-020-A* |
| Radiation Response Characterization | Total Ionization Dose, and Single-Event Latchup | 5 units/dose level | 1 | MIL-STD-883/Method 1019 |
| Outgassing Characterization | TML (Total Mass Lost), CVCM (Collected Volatile Condensable material), WVR (Water vapor recorded) | 5 | 1 | ASTM E595 |
| *Precondition performed per JEDEC Std. 22, Method A112/A113 | ||||