SLVAE32B August 2018 – December 2023 TPS7H2201-SP
The TPS7H2201-SP is a space grade, radiation-hardened, 1.5 to 7 V, 6 A ,e-fuse. The device contains a P-channel MOSFET as the switch element. The device supports a maximum of six amps of continuous current and provides a programmable current limit pin and fast current trip for overcurrent load protection. Additional features of the device include the following:
The device is offered in a thermally enhanced 16-pin ceramic, dual in-line flat-pack package. Table 1-1 lists the general device information and test conditions. See the TPS7H2201-SP product page for more detailed technical specifications, user guides, and applications notes.
| Description | Device Information |
|---|---|
| TI Part Number | TPS7H2201-SP |
| SMD Number | 5962R1722001VXC |
| Device Function | eFuse |
| Technology | 250 nm Linear BiCMOS 7 |
| Exposure Facility | Radiation Effects Facility, Cyclotron Institute, Texas A&M University |
| Heavy Ion Fluence per Run | ≥ 1 x 107 ions / cm2 |
| Irradiation Temperature | 25°C and 125°C (for SEL testing) |