SLLK034 January 2025 THVD9491-SEP
The following is the device qualification summary.
A new device can be qualified either by performing full scale quality and reliability tests on the actual device or using previously qualified devices through Qualification by Similarity (QBS) rules. By establishing similarity between the new device and those qualified previously, repetitive tests are eliminated, allowing for timely production release. When adopting QBS methodology, the emphasis is on qualifying the differences between a previously qualified product and the new product under consideration.
The QBS rules for a technology, product, test parameters, or package shall define which attributes are required to remain fixed for the QBS rules to apply. The attributes which are expected and allowed to vary is reviewed and a QBS plan is developed, based on the reliability impact assessment above, specifying what subset of the full complement of environmental stresses is required to evaluate the reliability impact of those variations. Each new device is reviewed for conformance to the QBS rule sets applicable to that device. See JEDEC JESD47 for more information.
| Note that qualification by similarity (“qualification family”) per JEDEC JESD47 is allowed. | ||||
|---|---|---|---|---|
| Description | Condition | Sample Size Used and Rejects | Lots Required | Test Method |
| Electromigration | Maximum recommended operating conditions | N/A | N/A | Per TI Design rules |
| Wire bond life | Maximum recommended operating conditions | N/A | N/A | Per TI Design rules |
| Electrical characterization | TI data sheet | 10 | 3 | N/A |
| Electrostatic discharge sensitivity | HBM | 3 units/voltage | 1 | JEDEC JS-001 or EIA/JESD22-A114 |
| CDM | JEDEC JS-002 or EIA/JESD22-C101 | |||
| Latch-up | Per technology | 3/0 | 1 | EIA/JESD78 |
| Physical dimensions | TI data sheet | 5/0 | 1 | EIA/JESD22- B100 |
| Thermal impedance | Theta-JA on board | Per pin-package | N/A | EIA/JESD51 |
| Bias life test | 125°C / 1000 hours or equivalent | 77/0 | 3 | JESD22-A108* |
| Biased HAST | 130°C / 85% / 96 hours | 77/0 | 3 | JESD22-A110/A101* |
| Extended biased HAST | 130°C / 85% / 192 hours (for reference) | 77/0 | 1 | JESD22-A110/A101* |
| Unbiased HAST | 130°C / 85% / 192 hours | 77/0 | 3 | JESD22-A118* |
| Temperature cycle | -65°C to +150°C non-biased for 500 cycles | 77/0 | 3 | JESD22-A104* |
| Solder heat | 260°C for 10 seconds | 22/0 | 1 | JESD22-B106 |
Resistance to Solvents | Ink Symbol only | 12/0 | 1 | JESD22-B107 |
| Solderability | Bake Preconditioning | 22/0 | 1 | ANSI/J-STD-002 |
| Flammability | Method A/Method B | 5/0 | 1 | UL-1964 |
| Bond shear | Per wire size | 5 units × 30/0 bonds | 3 | JESD22-B116 |
| Bond pull strength | Per wire size | 5 units × 30/0 bonds | 3 | ASTM F-459 |
| Die shear | Per die size | 5/0 | 3 | MIL-STD-883, TM 2019 |
| High temperature storage | 150 °C / 1000 hours | 15/0 | 3 | JESD22-A103* |
| Moisture sensitivity | Surface mount only | 12 | 1 | J-STD-020* |
| Radiation response characterization | Total ionization dose, single-event latch-up | 5 units / dose level | 1 | MIL-STD-883/Method 1019 |
| Outgassing characterization | TML <=1% (Total Mass Lost) CVCM <=0.1% (Collected Volatile Condensable Material) | 5 | 1 | ASTM E595 |