SCLK052 February 2024 SN54SC6T06-SEP , SN54SC6T07-SEP , SN54SC6T14-SEP , SN54SC6T17-SEP
The purpose of this study is to characterize the effects of heavy-ion irradiation on the single-event latch-up (SEL) performance of the SN54SC6T07-SEP, a radiation tolerant, hex open-drain buffer with integrated translation. Heavy-ions with an LETEFF of 43MeV-cm2 / mg were used to irradiate three production devices with a fluence of 1 × 107 ions / cm2. The results demonstrate that the SN54SC6T07-SEP is SEL-free up to LETEFF = 43MeV-cm2 / mg as 125°C.
The SN54SC6T07-SEP Single-Event Latch-Up (SEL) radiation report covers the SEL performance of all four devices listed below. The SN54SC6T07-SEP device covers all functional blocks and active die area of the other three devices, which is why the device was selected for single-event effect testing for this group of voltage translation devices.