SBOK044B December 2020 – December 2024 TPS7H4010-SEP
- 1
- 1 Abstract
- Trademarks
- 2 Introduction
- 3 Single-Event Effects (SEE)
- 4 Device and Test Board Information
- 5 Irradiation Facility and Setup
- 6 Depth, Range, and LETEFF Calculation
- 7 Test Setup and Procedures
- 8 Destructive Single-Event Effects (DSEE)
- 9 Single-Event Transients (SET)
- 10Event Rate Calculations
- 11Summary
- 12Revision History
- A Total Ionizing Dose from SEE Experiments
- B References
4 Device and Test Board Information
The TPS7H4010-SEP is packaged in a 30-pin WQFN plastic package as shown in Figure 4-1. The TPS7H4010EVM evaluation board was used to evaluate the performance and characteristics of the TPS7H4010-SEP under heavy-ions. Figure 4-2 shows the top view of the evaluation board used for the radiation testing. Figure 4-3 and Figure 4-4 shows the EVM board schematics for the VOUT = 3.3 V and VOUT = 1.8 V used for the heavy-ion testing campaign. See the TPS7H4010-SP Evaluation Module user's guide for more information about the evaluation board.
The package was delidded to reveal the die face for all heavy-ion testing.
![TPS7H4010-SEP Photograph of Delidded TPS7H4010-SEP [Left] and Pinout Diagram [Right]](/ods/images/SBOK044B/GUID-20201118-CA0I-RXN4-JK53-ZHQHG57JM9JJ-low.gif "TPS7H4010-SEP Photograph of Delidded TPS7H4010-SEP [Left] and Pinout Diagram [Right]")
Figure 4-1 Photograph of Delidded TPS7H4010-SEP [Left] and Pinout Diagram [Right]
Figure 4-2 TPS7H4010-SEP Board Top View
Figure 4-3 TPS7H4010EVM Schematic for VOUT = 3.3 V
Figure 4-4 TPS7H4010EVM Schematic for VOUT = 1.8 V