SBOK044B December 2020 – December 2024 TPS7H4010-SEP
- 1
- 1 Abstract
- Trademarks
- 2 Introduction
- 3 Single-Event Effects (SEE)
- 4 Device and Test Board Information
- 5 Irradiation Facility and Setup
- 6 Depth, Range, and LETEFF Calculation
- 7 Test Setup and Procedures
- 8 Destructive Single-Event Effects (DSEE)
- 9 Single-Event Transients (SET)
- 10Event Rate Calculations
- 11Summary
- 12Revision History
- A Total Ionizing Dose from SEE Experiments
- B References
6 Depth, Range, and LETEFF Calculation
![TPS7H4010-SEP Generalized Cross-Section of
the LBC8 Technology BEOL Stack on the TPS7H4010-SEP [Left] and SEUSS 2020
Application Used to Determine Key Ion Parameters [Right]](/ods/images/SBOK044B/GUID-20201120-CA0I-JBQF-7SDF-XV9GR8XWJXV3-low.gif "TPS7H4010-SEP Generalized Cross-Section of
the LBC8 Technology BEOL Stack on the TPS7H4010-SEP [Left] and SEUSS 2020
Application Used to Determine Key Ion Parameters [Right]")
Figure 6-1 Generalized Cross-Section of
the LBC8 Technology BEOL Stack on the TPS7H4010-SEP [Left] and SEUSS 2020
Application Used to Determine Key Ion Parameters [Right]The TPS7H4010-SEP is fabricated in the TI Linear BiCMOS 180-nm process with a back-end-of-line (BEOL) stack consisting of 4 levels of standard thickness aluminum metal on a 0.6-μm pitch. The total stack height from the surface of the passivation to the silicon surface is 5.46 μm based on nominal layer thickness as shown in Figure 6-1. Accounting for energy loss through the 1-mil thick Aramica beam port window, the 40-mm air gap, and the BEOL stack over the TPS7H4010-SEP, the effective LET (LETEFF) at the surface of the silicon substrate, the depth, and the ion range was determined with the SEUSS 2020 Software (provided by the Texas A&M Cyclotron Institute and based on the latest SRIM-2013 [7] models). The results are shown in Table 6-1. The LETEFF vs range for the 84Kr heavy-ion is shown on Figure 6-2. The stack was modeled as a homogeneous layer of silicon dioxide (valid since SiO2 and aluminum density are similar).
| ION TYPE | ANGLE OF INCIDENCE | DEGRADER STEPS (#) | DEGRADER ANGLE | RANGE IN SILICON (μm) |
LETEFF (MeV·cm2/mg) |
|---|---|---|---|---|---|
| 84Kr | 44.38 | 3 | 47.75 | 77.7 | 43 |
| 84Kr |
42.7 |
0 |
0 |
73.6 |
43.1 |
| 84Kr |
0 |
0 |
0 |
118.2 |
29.7 |
| 63Cu |
41.6 |
0 |
0 |
80.1 |
28.1 |
| 63Cu |
0 |
0 |
0 |
124.1 |
19.7 |
| 40Ar |
42.3 |
0 |
0 |
120.8 |
12 |
| 40Ar |
0 |
0 |
0 |
180.9 |
8.44 |
| 20Ne |
43.1 |
0 |
0 |
177 |
3.89 |
| 20Ne |
0 |
0 |
0 |
261.3 |
2.74 |
| 14N |
0 |
0 |
0 |
371.8 |
1.33 |
Figure 6-2 LETEFF vs Range for
84Kr at the Conditions Used for the SEE Test Campaign