SLUSFA7 July 2025 UCC57142 , UCC57148
PRODUCTION DATA
- 1
- 1Features
- 2Applications
- 3Description
- 4Pin Configuration and Functions
- 5Specifications
- 6Detailed Description
- 7 Applications and Implementation
- 8Revision History
- 9Mechanical, Packaging, and Orderable Information
封裝選項
請參考 PDF 數(shù)據(jù)表獲取器件具體的封裝圖。
機械數(shù)據(jù) (封裝 | 引腳)
- DBV|6
散熱焊盤機械數(shù)據(jù) (封裝 | 引腳)
訂購信息
6.3.3 Driver Stage
The device has a ±3-A peak drive strength and is suitable for driving Si MOSFET/ IGBT/SiC. The driver features an important safety function wherein, when the input pins are in a floating condition, the output is held in the LOW state. The driver has rail-to-rail output by implementing an NMOS pullup with intrinsic bootstrap gate drive. Under DC conditions, a PMOS is used to keep OUT tied to VDD as shown in the following figure. The low pullup impedance of the NMOS results in strong drive strength during the turn-on transient, which shortens the charging time of the input capacitance of the power semiconductor and reduces the turn on switching loss.
Figure 6-2 Gate Driver
Output Stage