ZHCSC62D March 2014 – December 2017 UCC28630 , UCC28631 , UCC28632 , UCC28633 , UCC28634
PRODUCTION DATA.
- 1 特性
- 2 應用
- 3 說明
- 4 修訂歷史記錄
- 5 Device Comparison Table
- 6 Pin Configuration and Functions
- 7 Specifications
-
8 Detailed Description
- 8.1 Overview
- 8.2 Functional Block Diagram
- 8.3
Feature Description
- 8.3.1 High-Voltage Current Source Start-Up Operation
- 8.3.2 AC Input UVLO / Brownout Protection
- 8.3.3 Active X-Capacitor Discharge (UCC28630 and UCC28633 only)
- 8.3.4 Magnetic Input and Output Voltage Sensing
- 8.3.5 Fixed-Point Magnetic Sense Sampling Error Sources
- 8.3.6 Magnetic Sense Resistor Network Calculations
- 8.3.7 Magnetic Sensing: Power Stage Design Constraints
- 8.3.8 Magnetic Sense Voltage Control Loop
- 8.3.9 Peak Current Mode Control
- 8.3.10 IPEAK Adjust vs. Line
- 8.3.11 Primary-Side Constant-Current Limit (CC Mode)
- 8.3.12 Primary-Side Overload Timer (UCC28630 only)
- 8.3.13 Overload Timer Adjustment (UCC28630 only)
- 8.3.14 CC-Mode IOUT(lim) Adjustment
- 8.3.15 Fault Protections
- 8.3.16 Pin-Fault Detection and Protection
- 8.3.17 Over-Temperature Protection
- 8.3.18 External Fault Input
- 8.3.19 External SD Pin Wake Input (except UCC28633)
- 8.3.20 External Wake Input at VSENSE Pin (UCC28633 Only)
- 8.3.21 Mode Control and Switching Frequency Modulation
- 8.3.22 Frequency Dither For EMI (except UCC28632)
- 8.4 Device Functional Modes
-
9 Applications and Implementation
- 9.1 Application Information
- 9.2
Typical Application
- 9.2.1 Notebook Adapter, 19.5 V, 65 W
- 9.2.2 UCC28630 Application Schematic
- 9.2.3 Design Requirements
- 9.2.4
Detailed Design Procedure
- 9.2.4.1 Custom Design With WEBENCH? Tools
- 9.2.4.2 Input Bulk Capacitance and Minimum Bulk Voltage
- 9.2.4.3 Transformer Turn Ratio
- 9.2.4.4 Transformer Magnetizing Inductance
- 9.2.4.5 Current Sense Resistor RCS
- 9.2.4.6 Transformer Constraint Verification
- 9.2.4.7 Transformer Selection and Design
- 9.2.4.8 Slope Compensation Verification
- 9.2.4.9 Power MOSFET and Output Rectifier Selection
- 9.2.4.10 Output Capacitor Selection
- 9.2.4.11 Calculation of CC Mode Limit Point
- 9.2.4.12 VDD Capacitor Selection
- 9.2.4.13 Magnetic Sense Resistor Network Selection
- 9.2.4.14 Output LED Pre-Load Resistor Calculation
- 9.2.5 External Wake Pulse Calculation at VSENSE Pin (UCC28633 Only)
- 9.2.6 Energy Star Average Efficiency and Standby Power
- 9.2.7 Application Performance Plots
- 9.3 Dos and Don'ts
- 10Power Supply Recommendations
- 11Layout
- 12器件和文檔支持
- 13機械、封裝和可訂購信息
9.2.4.3 Transformer Turn Ratio
Choose the transformer primary-to-secondary-side turns ratio based on the allowed voltage stress for the output rectifier, or the primary MOSFET. For 19.5-V charger designs, it is valid to choose a turns ratio that allows the use of a more efficient 100-V Schottky rectifier.
For a good Schottky diode with 100-V reverse rating, VREV(rated), the rectifier forward voltage drop, VRECT, can be expected to be in the range of 0.4 V to 0.5 V at 3 A to 5 A, at practical operating temperatures in the region of 100°C. Allowing an 85% derating on the rectifier reverse voltage stress, Equation 23 indicates a required turns ratio of 5.734 for a maximum AC peak voltage of 373 V (264 VRMS).
Choose the bias winding turns ratio to set the nominal bias voltage for the device VDD pin. Use an initial VBIAS(target) of 12 V.
where
- VF is the forward voltage drop of the rectifier on the bias winding.
For a typical 0.7-V bias-diode drop, this equation calculates to 0.6366.
When the transformer size and type are chosen, the actual turns values can be calculated. Because the turns need to be rounded to integer values, the actual turns ratios achieved deviates from these targets. Check the final ratios to ensure that the secondary-side Schottky rectifier stress and the bias winding nominal level are acceptable. Adjust the specific turns counts to meet the target ratios.