6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
|
MIN |
MAX |
UNIT |
| Input voltage (3)
|
VDD |
–0.3 |
30 |
V |
| VD
|
–0.7 |
230 |
V |
| VG
|
–0.3 |
VREG
|
V |
| VD for IVD ≤ –10 mA |
–1.0 |
230 |
V |
| REG |
|
12 |
V |
| Output current, peak |
VG(2) pulsed, tPULSE ≤ 4 ms, duty cycle ≤ 1% |
|
±4 |
A |
| TJ
|
Operating junction temperature |
–40 |
125 |
°C |
| Tstg
|
Storage temperature |
–65 |
150 |
°C |
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) In normal use, VG is connected to the gate of a power MOSFET through a small resistor. When used this way, VG current is limited by the UCC24612 and no absolute maximum output current considerations are required. The series resistor shall be selected to minimize overshoot and ringing due to series inductance of the VG output and power-MOSFET gate-drive loop. Continuous VG current is subject to the maximum operating junction temperature limitation.
(3) Input voltages more negative than indicated may exist on any listed pin without excess stress or damage to the device if the pin’s input current magnitude is limited to less than -10mA.