ZHCSE31A July 2014 – December 2014 TS5A3166-Q1
PRODUCTION DATA.
- 1 特性
- 2 應用
- 3 說明
- 4 簡化電路原理圖
- 5 修訂歷史記錄
- 6 Pin Configuration and Functions
-
7 Specifications
- 7.1 Absolute Maximum Ratings
- 7.2 ESD Ratings
- 7.3 Recommended Operating Conditions
- 7.4 Thermal Information
- 7.5 Electrical Characteristics for 5-V Supply
- 7.6 Electrical Characteristics for 3.3-V Supply
- 7.7 Electrical Characteristics for 2.5-V Supply
- 7.8 Electrical Characteristics for 1.8-V Supply
- 7.9 Typical Characteristics
- 8 Parameter Measurement Information
- 9 Detailed Description
- 10Application and Implementation
- 11Power Supply Recommendations
- 12Layout
- 13器件和文檔支持
- 14機械、封裝和可訂購信息
9 Detailed Description
9.1 Overview
Table 1. Parameter Description
| SYMBOL | DESCRIPTION |
|---|---|
| VCOM | Voltage at COM |
| VNO | Voltage at NO |
| ron | Resistance between COM and NO ports when the channel is ON |
| rpeak | Peak on-state resistance over a specified voltage range |
| ron(flat) | Difference between the maximum and minimum value of ron in a channel over the specified range of conditions |
| INO(OFF) | Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the OFF state under worst-case input and output conditions |
| INO(PWROFF) | Leakage current measured at the NO port during the power-down condition, V+ = 0 |
| ICOM(OFF) | Leakage current measured at the COM port, with the corresponding channel (COM to NO) in the OFF state under worst-case input and output conditions |
| ICOM(PWROFF) | Leakage current measured at the COM port during the power-down condition, V+ = 0 |
| INO(ON) | Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the ON state and the output (COM) open |
| ICOM(ON) | Leakage current measured at the COM port, with the corresponding channel (COM to NO) in the ON state and the output (NO) open |
| VIH | Minimum input voltage for logic high for the control input (IN) |
| VIL | Maximum input voltage for logic low for the control input (IN) |
| VI | Voltage at the control input (IN) |
| IIH, IIL | Leakage current measured at the control input (IN) |
| tON | Turn-on time for the switch. This parameter is measured under the specified range of conditions and by the propagation delay between the digital control (IN) signal and analog output (COM or NO) signal when the switch is turning ON. |
| tOFF | Turn-off time for the switch. This parameter is measured under the specified range of conditions and by the propagation delay between the digital control (IN) signal and analog output (COM or NO) signal when the switch is turning OFF. |
| QC | Charge injection is a measurement of unwanted signal coupling from the control (IN) input to the analog (NO or COM) output. This is measured in coulomb (C) and measured by the total charge induced due to switching of the control input. Charge injection, QC = CL × ΔVCOM, CL is the load capacitance, and ΔVCOM is the change in analog output voltage. |
| CNO(OFF) | Capacitance at the NO port when the corresponding channel (NO to COM) is OFF |
| CCOM(OFF) | Capacitance at the COM port when the corresponding channel (COM to NO) is OFF |
| CNO(ON) | Capacitance at the NO port when the corresponding channel (NO to COM) is ON |
| CCOM(ON) | Capacitance at the COM port when the corresponding channel (COM to NO) is ON |
| CI | Capacitance of control input (IN) |
| OISO | OFF isolation of the switch is a measurement of OFF-state switch impedance. This is measured in dB in a specific frequency, with the corresponding channel (NO to COM) in the OFF state. |
| BW | Bandwidth of the switch. This is the frequency in which the gain of an ON channel is –3 dB below the DC gain. |
| THD | Total harmonic distortion describes the signal distortion caused by the analog switch. This is defined as the ratio of root mean square (RMS) value of the second, third, and higher harmonic to the absolute magnitude of the fundamental harmonic. |
| I+ | Static power-supply current with the control (IN) pin at V+ or GND |
9.2 Functional Block Diagram
9.3 Feature Description
Table 2. Summary Of Characteristics(1)
| Configuration | Single Pole Single Throw (SPST) |
|---|---|
| Number of channels | 1 |
| ON-state resistance (ron) | 0.9 Ω |
| ON-state resistance flatness (ron(flat)) | 0.15 Ω |
| Turn-on/turn-off time (tON/tOFF) | 7.5 ns/12.5 ns |
| Charge injection (QC) | 1 pC |
| Bandwidth (BW) | 200 MHz |
| OFF isolation (OISO) | –64 dB at 1 MHz |
| Total harmonic distortion (THD) | 0.005% |
| Leakage current (ICOM(OFF)) | ±4 nA |
| Power-supply current (I+) | 0.5 μA |
| Package option | 5-pin DSBGA, SOT-23, or SC-70 |
(1) V+ = 5 V, TA = 25°C
9.4 Device Functional Modes
Table 3. Function Table
| IN | NO TO COM, COM TO NO |
|---|---|
| L | OFF |
| H | ON |