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ZHCSPU3A October 2023 – December 2023 TPSM843320

PRODUCTION DATA

封裝選項(xiàng)

機(jī)械數(shù)據(jù) (封裝 | 引腳)

SIT|15
- MPQS048B

散熱焊盤機(jī)械數(shù)據(jù) (封裝 | 引腳)

訂購信息

zhcspu3a_oa

5.5 Electrical Characteristics (Module)

T_J = –40°C to +125°C, V_VIN = 4 V - 18 V (unless otherwise noted)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
SUPPLY VOLTAGE
I_Q(VIN)	VIN operating non-switching supply current	V_EN = 1.3 V, V_FB = 550 mV, V_VIN = 12 V, 1 MHz		1200	1600	μA
I_SD(VIN)	VIN shutdown supply current	V_EN = 0 V, V_VIN = 12 V		15	25	μA
	VIN UVLO rising threshold	VIN rising	3.9	4	4.1	V
	VIN UVLO hysteresis			150		mV
ENABLE AND UVLO
V_EN(rise)	EN voltage rising threshold	EN rising, enable switching		1.2	1.25	V
V_EN(fall)	EN voltage falling threshold	EN falling, disable switching	1.05	1.1		V
V_EN(hyst)	EN voltage hysteresis			100		mV
	EN pin sourcing current	V_EN = 1.1 V	0.4	1.5		μA
	EN pin sourcing current	V_EN = 1.3 V		11.6		μA
INTERNAL LDO BP5
V_BP5	Internal LDO BP5 output voltage	V_VIN= 12 V		4.5		V
	BP5 dropout voltage	V_VIN – V_BP5, V_VIN= 3.8 V			350	mV
	BP5 short-circuit current limit	V_VIN= 12 V		75		mA
REFERENCE VOLTAGE
V_FB	Feedback Voltage	T_J = –40°C to 125°C	495	500	505	mV
I_FB(LKG)	Input leakage current into FB pin	V_FB = 500 mV, non-switching, V_VIN = 12 V, V_EN = 0 V		1		nA
SWITCHING FREQUENCY AND OSCILLATOR
f_SW	Switching frequency	RFSEL = 24.3 kΩ	450	500	550	kHz
f_SW	Switching frequency	R_FSEL = 17.4 kΩ	675	750	825	kHz
f_SW	Switching frequency	RFSEL = 11.8 kΩ	900	1000	1100	kHz
f_SW	Switching frequency	R_FSEL = 8.06 kΩ	1350	1500	1650	kHz
f_SW	Switching frequency	R_FSEL = 4.99 kΩ	1980	2200	2420	kHz
SYNCHRONIZATION
V_IH(sync)	High-level input voltage		1.8			V
V_IL(sync)	Low-level input voltage				0.8	V
SOFT-START
t_SS1	Soft-start time	R_MODE = 1.78 k?		0.5		ms
t_SS2	Soft-start time	R_MODE = 2.21 k?		1		ms
t_SS3	Soft-start time	R_MODE = 2.74 k?		2		ms
t_SS4	Soft-start time	R_MODE = 3.32 k?		4		ms
POWER STAGE
R_DS(on)HS	High-side MOSFET on-resistance	T_J= 25°C, V_VIN = 12 V, V_BOOT-SW = 4.5 V		25		mΩ
R_DS(on)LS	Low-side MOSFET on-resistance	T_J= 25°C, V_BP5 = 4.5 V		13.9		mΩ
V_{VIN(TH_r)}	VIN throttle rising threshold⁽²⁾	T_J= 25°C. Weaken high-side gate drive upon VIN rising	15.7	16	16.3	V
V_{BOOT-SW(UV_r)}	BOOT-SW UVLO rising threshold	V_BOOT-SW rising		3.2		V
V_{BOOT-SW(UV_f)}	BOOT-SW UVLO falling threshold	V_BOOT-SW falling		2.8		V
T_ON(min)	Minimum ON pulse width	I_OUT> ? I_{L_PK-PK}		30	37	ns
T_OFF(min)	Minimum OFF pulse width ⁽¹⁾			115	140	ns
CURRENT SENSE AND OVERCURRENT PROTECTION
I_{OC_HS_pk1}	High-side peak current limit(3A)	R_MODE = 1.78 k?	4.6	4.9	5.1	A
I_{OC_HS_pk2}	High-side peak current limit(3A)	R_MODE = 22.1 k?	2.9	3.3	3.5	A
I_{OC_LS_src1}	Low-side sourcing current limit(3A)	R_MODE = 1.78 k?	3.8	4.2	4.5	A
I_{OC_LS_src2}	Low-side sourcing current limit(3A)	R_MODE = 22.1 k?	2.7	3.0	3.3	A
I_{OC_LS_snk}	Low-side sinking current limit	Current into SW pin	1.9			A
OUTPUT OVERVOLTAGE AND UNDERVOLTAGE PROTECTIONS
V_OVP	Overvoltage-protection (OVP) threshold voltage	V_FB rising		120		% V_REF
V_UVP	Undervoltage-protection (UVP) threshold voltage	V_FB falling		80		% V_REF
POWER GOOD
	PGOOD threshold	V_FB rising (Fault)	113	116	119	% V_REF
	PGOOD threshold	V_FB falling (Good)	105	108	111	% V_REF
	PGOOD threshold	V_FB rising (Good)	89	92	95	% V_REF
	PGOOD threshold	V_FB falling (Fault)	81	84	87	% V_REF
I_PGOOD(LKG)	Leakage current into PGOOD pin when open drain output is high	V_PGOOD= 4.7 V			5	μA
V_PG(low)	PGOOD low-level output voltage	I_PGOOD= 2 mA, V_IN = 12 V			0.5	V
	Min VIN for valid PGOOD output			0.9	1	V
HICCUP
	Hiccup time before re-start			7*t_SS		ms
OUTPUT DISCHARGE
R_Dischg	Output discharge resistance	V_VIN = 12 V, V_SW = 0.5 V, power conversion disabled.		100		?
THERMAL SHUTDOWN
T_SDN	Thermal shutdown threshold ⁽¹⁾	Temperature rising		165	175	°C
T_HYST	Thermal shutdown hysteresis ⁽¹⁾			12		°C

(1) Specified by design. Not production tested.

(2) Specified by correlation. Not production tested.