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ZHCSK69F August 2019 – November 2021 TPSM82821 , TPSM82821A , TPSM82822 , TPSM82822A , TPSM82823 , TPSM82823A

PRODUCTION DATA

封裝選項(xiàng)

請(qǐng)參考 PDF 數(shù)據(jù)表獲取器件具體的封裝圖。

機(jī)械數(shù)據(jù) (封裝 | 引腳)

SIL|10

散熱焊盤(pán)機(jī)械數(shù)據(jù) (封裝 | 引腳)

訂購(gòu)信息

7.5 Electrical Characteristics

T_J = –40°C to 125°C and V_IN = 2.4 V to 5.5 V. Typical values are at T_J = 25°C and V_IN = 5 V, unless otherwise noted.

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
SUPPLY
I_Q	Quiescent current into the VIN	EN = High, no load, device not switching		4	10	μA
I_SD	Shutdown current into the VIN	EN = Low, T_J = –40°C to 85°C		0.05	0.5	μA
I_Q	Quiescent current	EN = High, no load, device switching, FPWM devices		8		mA
V_UVLO	Undervoltage lockout threshold	V_IN falling	2.1	2.2	2.3	V
V_UVLO	Undervoltage lockout hysteresis	V_IN rising		160		mV
T_JSD	Thermal shutdown threshold	T_J rising		150		°C
T_JSD	Thermal shutdown hysteresis	T_J falling		20		°C
LOGIC INTERFACE EN
V_IH	High-level input voltage		1.0			V
V_IL	Low-level input voltage				0.4	V
I_lkg(EN)	Input leakage current into EN pin	EN = High		0.01	0.1	μA
SOFT START, POWER GOOD
t_SS	Soft-start time	Time from EN high to 95% of V_OUT nominal		1.25		ms
V_PGTH	Power-good lower threshold	V_PG rising, V_FB referenced to V_FB nominal	94%	96%	98%
	Power-good lower threshold	V_PGfalling, V_FB referenced to V_FB nominal	90%	92%	94%
	Power-good upper threshold	V_PG falling, V_FB referenced to V_FB nominal	103%	105%	107%
	Power-good upper threshold	V_PG rising, V_FB referenced to V_FB nominal	108%	110%	112%
V_PG,OL	Low-level output voltage	I_sink = 1 mA			0.4	V
I_lkg(PG)	Input leakage current into PG pin	V_PG = 5 V		0.01	0.1	μA
OUTPUT
V_OUT	Output voltage accuracy	TPSM828211, TPSM828221, PWM mode	1.188	1.2	1.212	V
		TPSM828212, TPSM828222, PWM mode	1.782	1.8	1.818
		TPSM828213, TPSM828223, PWM mode	2.475	2.5	2.525
		TPSM828214, TPSM828224, PWM mode	3.267	3.3	3.333
V_FB	Feedback regulation voltage	PWM mode	594	600	606	mV
I_lkg(FB)	Feedback input leakage current	V_FB = 0.6 V		0.01	0.05	μA
I_DIS	Output discharge current	EN = Low, V_SW = 0.4 V	75	400		mA
POWER SWITCH
R_DS(on)	High-side FET on-resistance			26		m?
R_DS(on)	Low-side FET on-resistance			26		m?
R_DP	Dropout resistance	TPSM82821, TPSM82821A, 100% mode. V_IN = 2.7 V, T_J = 25°C		115	145	m?
		TPSM82822, TPSM82822A, 100% mode. V_IN = 2.7 V, T_J = 25°C		90	120
		TPSM82823, TPSM82823A, 100% mode. V_IN = 2.7 V, T_J = 25°C		70	95
I_LIMF	High-side FET switch current limit	TPSM82821A	1.7	2.1	2.4	A
I_LIMF	High-side FET switch current limit	TPSM82821	1.75	2.2	2.75	A
		TPSM82822, TPSM82822A	2.7	3.3	3.9
		TPSM82823, TPSM82823A	3.7	4.3	5.0
I_LIM	Low-side FET negative current limit, DC	TPSM82821A/TPSM82822A/TPSM82823A		–1.6		A
f_SW	PWM switching frequency	I_OUT= 1 A		4		MHz