ZHCSKB4C September 2019 – December 2024 TPSM82810 , TPSM82813
PRODMIX
請參考 PDF 數據表獲取器件具體的封裝圖。
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| SUPPLY | ||||||
| IQ | Operating Quiescent Current | EN = high, IOUT = 0mA, Device not switching | 15 | 21 | μA | |
| ISD | Shutdown Current | EN = 0V | 0.11 | 18 | μA | |
| VUVLO | Undervoltage Lockout Threshold | Rising Input Voltage | 2.5 | 2.6 | 2.75 | V |
| Falling Input Voltage | 2.25 | 2.5 | 2.6 | V | ||
| TSD | Thermal Shutdown Temperature | Rising Junction Temperature | 170 | °C | ||
| Thermal Shutdown Hysteresis | 15 | |||||
| CONTROL (EN, SS/TR, PG, MODE/SYNC) | ||||||
| VIH | High Level Input Voltage for MODE/SYNC Pin | 1.1 | V | |||
| VIL | Low Level Input Voltage for MODE/SYNC Pin | 0.3 | V | |||
| fSYNC | Frequency Range on MODE/SYNC Pin for Synchronization | 1.8 | 4 | MHz | ||
| Duty Cycle of Synchronization Signal at MODE/SYNC Pin | 40% | 50% | 60% | |||
| VIH | Input Threshold Voltage for EN pin | Rising EN |
1.06 | 1.1 | 1.15 | V |
| VIL | Input Threshold Voltage for EN pin | Falling EN |
0.96 | 1.0 | 1.05 | V |
| ILKG | Input Leakage Current for EN, MODE/SYNC Pins | EN, MODE/SYNC = VIN or GND | 150 | nA | ||
| VTH_PG | UVP Power Good Threshold | Rising (%VFB) | 92% | 95% | 98% | |
| UVP Power Good Threshold | Falling (%VFB) | 87% | 90% | 93% | ||
| OVP Power Good Threshold | Rising (%VFB) | 107% | 110% | 113% | ||
| OVP Power Good Threshold | Falling (%VFB) | 104% | 107% | 111% | ||
| Power Good De-glitch Time | for a high level to low level transition on power good | 40 | μs | |||
| VOL_PG | Power Good Output Low Voltage | IPG = 2mA | 0.07 | 0.3 | V | |
| ILKG_PG | Input Leakage Current for PG Pin | VPG = 5V | 100 | nA | ||
| ISS/TR | SS/TR Pin Source Current | 2.1 | 2.5 | 2.8 | μA | |
| tdelay | Start-up Delay Time | Time from EN=high to start switching; VIN applied already | 135 | 200 | 450 | μs |
| tramp | Ramp time; SS/TR Pin Open | Time from first switching pulse until 95% of nominal output voltage | 100 | 150 | 200 | μs |
| Tracking Gain | VFB/VSS/TR | 1 | ||||
| Tracking Offset | FB pin with VSS/TR = 0V | 17 | mV | |||
| POWER SWITCH | ||||||
| RDS(ON) | High-Side MOSFET ON-Resistance | VIN ≥ 5V | 37 | 60 | mΩ | |
| RDS(ON) | Low-Side MOSFET ON-Resistance | VIN ≥ 5V | 15 | 35 | mΩ | |
| RDP | Dropout resistance | 100% mode. Maximum value at VIN = 3.3V, TJ = 85°C | 50 | 90 | m? | |
| ILIMH | High-Side MOSFET Current Limit (1) | TPSM82810; VIN = 3V to 6V | 4.8 | 5.6 | 6.55 | A |
| ILIMH | High-Side MOSFET Current Limit(1) | TPSM82813; VIN = 3V to 6V | 3.9 | 4.5 | 5.25 | A |
| ILIMNEG | Negative Current Limit (1) | MODE/SYNC = HIGH | –1.8 | A | ||
| fS | PWM Switching Frequency Range | 1.8 | 2.25 | 4 | MHz | |
| fS | PWM Switching Frequency |
with COMP/FSET tied to VIN or GND | 2.025 | 2.25 | 2.475 | MHz |
| PWM Switching Frequency Tolerance | using a resistor from COMP/FSET to GND | –19% | 18% | |||
| ton,min | Minimum on-time | VIN = 3.3V | 50 | 75 | ns | |
| toff,min | Minimum off-time | VIN = 3.3V | 30 | ns | ||
| OUTPUT | ||||||
| VFB | Feedback Voltage Accuracy | VIN ≥ VOUT + 1V; PWM mode | 594 | 600 | 606 | mV |
| VIN ≥ VOUT + 1V; PFM mode VOUT ≥ 1.5V; COUT,eff ≥ 27μF |
594 | 600 | 612 | mV | ||
| 1 V ≤ VOUT < 1.5V; PFM mode COUT,eff ≥ 47μF | 594 | 600 | 615 | mV | ||
| ILKG_FB | Input Leakage Current (FB pin) | VFB = 0.6V | 1 | 70 | nA | |
| VFB | Feedback Voltage Accuracy with Voltage Tracking | VIN ≥ VOUT + 1V; PWM mode VSS/TR = 0.3V |
297 | 300 | 321 | mV |
| Rdis | Output Discharge Resistance | 30 | 50 | Ω | ||