ZHCSPR0B april 2022 – august 2023 TPSI3052
PRODUCTION DATA
- 1
- 1 特性
- 2 應(yīng)用
- 3 說明
- 4 Revision History
- 5 Pin Configuration and Functions
-
6 Specifications
- 6.1 Absolute Maximum Ratings
- 6.2 ESD Ratings
- 6.3 Recommended Operating Conditions
- 6.4 Thermal Information
- 6.5 Power Ratings
- 6.6 Insulation Specifications
- 6.7 Safety-Related Certifications
- 6.8 Safety Limiting Values
- 6.9 Electrical Characteristics
- 6.10 Switching Characteristics
- 6.11 Insulation Characteristic Curves
- 6.12 Typical Characteristics
- 7 Parameter Measurement Information
- 8 Detailed Description
-
9 Application and Implementation
- 9.1 Application Information
- 9.2
Typical Application
- 9.2.1 Design Requirements
- 9.2.2
Detailed Design Procedure
- 9.2.2.1 Two-Wire or Three-Wire Mode Selection
- 9.2.2.2 Standard Enable, One-Shot Enable
- 9.2.2.3 CDIV1, CDIV2 Capacitance
- 9.2.2.4 RPXFR Selection
- 9.2.2.5 CVDDP Capacitance
- 9.2.2.6 Gate Driver Output Resistor
- 9.2.2.7 Start-up Time and Recovery Time
- 9.2.2.8 Supplying Auxiliary Current, IAUX From VDDM
- 9.2.2.9 VDDM Ripple Voltage
- 9.2.3 Application Curves
- 9.3 Power Supply Recommendations
- 9.4 Layout
- 10Device and Documentation Support
- 11Mechanical, Packaging, and Orderable Information
10.5 靜電放電警告
 |
靜電放電 (ESD) 會損壞這個集成電路。德州儀器 (TI) 建議通過適當(dāng)?shù)念A(yù)防措施處理所有集成電路。如果不遵守正確的處理和安裝程序，可能會損壞集成電路。 |
| ESD 的損壞小至導(dǎo)致微小的性能降級，大至整個器件故障。精密的集成電路可能更容易受到損壞，這是因為非常細微的參數(shù)更改都可能會導(dǎo)致器件與其發(fā)布的規(guī)格不相符。 |