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ZHCS992F June 2012 – September 2014

PRODUCTION DATA.

封裝選項

機械數據 (封裝 | 引腳)

RGW|20
- MPQF122C

散熱焊盤機械數據 (封裝 | 引腳)

RGW|20
- QFND012L

訂購信息

6 Specifications

6.1 Absolute Maximum Ratings

Over junction temperature range, unless otherwise noted.⁽¹⁾

		MIN	MAX	UNIT
Voltage⁽²⁾	IN pin to GND pin	–0.4	+36	V
	EN pin to GND pin	–0.4	+36	V
	EN pin to IN pin	–36	+0.4	V
	OUT pin to GND pin	–0.4	+36	V
	NR pin to GND pin	–0.4	+36	V
	SENSE/FB pin to GND pin	–0.4	+36	V
	0P1V pin to GND pin	–0.4	+36	V
	0P2V pin to GND pin	–0.4	+36	V
	0P4V pin to GND pin	–0.4	+36	V
	0P8V pin to GND pin	–0.4	+36	V
	1P6V pin to GND pin	–0.4	+36	V
	3P2V pin to GND pin	–0.4	+36	V
	6P4V1 pin to GND pin	–0.4	+36	V
	6P4V2 pin to GND pin	–0.4	+36	V
Current	Peak output	Internally limited
Temperature	Operating virtual junction, T_J	–40	125	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability..

(2) All voltages are with respect to network ground terminal.

6.2 Handling Ratings

				MIN	MAX	UNIT
T_stg	Storage temperature range			–65	150	°C
V_(ESD)	Electrostatic discharge	TPS7A4700	Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins⁽¹⁾	–1000	1000	V
		TPS7A4700	Charged device model (CDM), per JEDEC specification JESD22-C101, all pins⁽²⁾	–500	500	V
		TPS7A4701	Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins⁽¹⁾	–2500	2500	V
		TPS7A4701	Charged device model (CDM), per JEDEC specification JESD22-C101, all pins⁽²⁾	–500	500	V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over junction temperature range (unless otherwise noted)

	MIN	MAX	UNIT
V_I	3.0	35.0	V
V_O	1.4	34.0	V
V_EN	0	V_IN	V
I_O	0	1.0	A

6.4 Thermal Information

THERMAL METRIC⁽¹⁾		TPS7A47xx	UNIT
		RGW
		20 PINS
R_θJA	Junction-to-ambient thermal resistance	32.5	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	27
R_θJB	Junction-to-board thermal resistance	11.9
ψ_JT	Junction-to-top characterization parameter	0.3
ψ_JB	Junction-to-board characterization parameter	11.9
R_θJC(bot)	Junction-to-case (bottom) thermal resistance	1.7

(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

At –40°C ≤ T_J ≤ 125°C; V_I = V_O(nom) + 1.0 V or V_I = 3.0 V (whichever is greater); V_EN = V_I; I_O = 0 mA; C_IN =10 µF; C_OUT = 10 µF; C_NR = 10 nF; SENSE/FB tied to OUT; and 0P1V, 0P2V, 0P4V, 0P8V, 1P6V, 3P2V, 6P4V1, 6P4V2 pins OPEN, unless otherwise noted.

PARAMETER		TEST CONDITIONS		MIN	TYP	MAX	UNIT
V_I	Input voltage range			3		35	V
V_UVLO	Under-voltage lockout threshold	V_I rising			2.67		V
V_UVLO	Under-voltage lockout threshold	V_I falling			2.5		V
V_(REF)	Reference voltage	V_(REF) = V_(FB), TPS7A4701 only			1.4		V
V_UVLO(HYS)	Under-voltage lockout hysteresis				177		mV
V_NR	Noise reduction pin voltage	TPS7A4700, TPS7A4701 using ANY-OUT option			V_OUT		V
V_NR	Noise reduction pin voltage	TPS7A4701 in adjustable mode only			1.4		V
V_O	Output voltage range	V_I ≥ V_O(nom) + 1.0 V or 3 V (whichever is greater), C_OUT = 20 µF	TPS7A4700, TPS7A4701 using ANY-OUT option	1.4		20.5	V
	Output voltage range		TPS7A4701 using adjustable option	1.4		34	V
	Nominal accuracy	T_J = 25°C, C_OUT = 20 µF		–1.0		1.0	%V_O
	Overall accuracy	V_O(nom) + 1.0 V ≤ V_I ≤ 35 V, 0 mA ≤ I_O ≤ 1 A, C_OUT = 20 µF		–2.5		2.5	%V_O
ΔV_O(ΔVI)	Line regulation	V_O(nom) + 1.0 V ≤ V_I ≤ 35 V			0.092		%V_O
ΔV_O(ΔIO)	Load regulation	0 mA ≤ I_O ≤ 1 A			0.3		%V_O
V_(DO)	Dropout voltage	V_I = 95% V_O(nom), I_O = 0.5 A			216		mV
V_(DO)	Dropout voltage	V_I = 95% V_O(nom), I_O = 1 A			307	450	mV
I_(CL)	Current limit	V_O = 90% V_O(nom)		1	1.26		A
I_(GND)	Ground pin current	I_O = 0 mA			0.58	1.0	mA
I_(GND)	Ground pin current	I_O = 1 A			6.1		mA
I_(EN)	Enable pin current	V_EN = V_I			0.78	2	µA
I_(EN)	Enable pin current	V_I = V_EN = 35 V			0.81	2	µA
I_(SHDN)	Shutdown supply current	V_EN = 0.4 V			2.55	8	µA
I_(SHDN)	Shutdown supply current	V_EN = 0.4 V, V_I = 35 V			3.04	60	µA
V_+EN(HI)	Enable high-level voltage			2.0		V_I	V
V_+EN(LO)	Enable low-level voltage			0.0		0.4	V
I_(FB)	Feedback pin current				350		nA
PSRR	Power-supply rejection ratio	V_I = 16 V, V_O(nom) = 15 V, C_OUT = 50 µF, I_O = 500 mA, C_NR = 1 µF, f = 1 kHz			78		dB
V_n	Output noise voltage	V_I = 3 V, V_O(nom) = 1.4 V, C_OUT = 50 µF, C_NR = 1 µF, BW = 10 Hz to 100 kHz			4.17		µV_RMS
V_n	Output noise voltage	V_IN = 6 V, V_O(nom) = 5 V, C_OUT = 50 µF, C_NR = 1 µF, BW = 10 Hz to 100 kHz			4.67		µV_RMS
T_sd	Thermal shutdown temperature	Shutdown, temperature increasing			170		°C
T_sd	Thermal shutdown temperature	Reset, temperature decreasing			150		°C
T_J	Operating junction temperature			–40		125	°C

6.6 Typical Characteristics

At –40°C ≤ T_J ≤ 125°C; V_I = V_O(nom) + 1.0 V or V_I = 3.0 V (whichever is greater); V_EN = V_I; I_O = 0 mA; C_IN =10 µF; C_OUT = 10 µF; C_NR = 1 µF; SENSE/FB tied to OUT; and 0P1V, 0P2V, 0P4V, 0P8V, 1P6V, 3P2V, 6P4V1, 6P4V2 pins OPEN, unless otherwise noted.