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ZHCSEV1A February 2016 – March 2016 TPS62770

PRODUCTION DATA.

封裝選項(xiàng)

機(jī)械數(shù)據(jù) (封裝 | 引腳)

YFP|16
- MXBG103C

散熱焊盤機(jī)械數(shù)據(jù) (封裝 | 引腳)

訂購(gòu)信息

zhcsev1a_oa

6 Specifications

Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) ⁽¹⁾

		MIN	MAX	UNIT
Pin voltage⁽²⁾	VIN, FB	–0.3	6	V
	SW1	–0.3	V_IN +0.3V	V
	EN1, EN2/PWM, CTRL, BM, VSEL1-3	–0.3	V_IN +0.3V	V
	SW2, VO2	-0.3	32	V
	VO1, LOAD	–0.3	3.7	V
T_J	Operating junction temperature range	–40	125	°C
T_stg	Storage temperature range	–65	150	°C

(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute–maximum–rated conditions for extended periods may affect device reliability.

(2) All voltage values are with respect to network ground terminal GND.

6.1 ESD Ratings

			VALUE		UNIT
V_(ESD)	Electrostatic discharge	Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins⁽¹⁾	± 2000		V
V_(ESD)	Electrostatic discharge	Charged device model (CDM), per JEDEC specification JESD22-C101, all pins⁽²⁾	±500		V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. The human body model is a 100-pF capacitor discharged through a 1.5-kΩ resistor into each pin.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

Recommended Operating Conditions

			MIN	MAX	UNIT
V_IN	Input voltage range at VIN pin		2.5	5.5	V
I_OUT1	DC/DC 1 Step down converter output current	L1 = 2.2µH, C_OUT1 = 10 µF		300	mA
I_OUT2	DC/DC 2 Step up converter output current	2.5V < VIN < 5.5V, VOUT2 = 12V, C_OUT2 = 10uF, L = 10µH		30	mA
		2.5V < VIN < 5.5V, VOUT2 = 12V, C_OUT2 = 2x 10uF, L = 10µH		100
		3V < VIN < 5.5V, VOUT2 = 5V, C_OUT2 = 2x 10uF, L = 4.7µH		200
I_LOAD	Load current (current from LOAD pin)			100
T_J	Operating junction temperature range		-40	125	°C
T_A	Ambient temperature range		-40	85	°C

6.2 Thermal Information

THERMAL METRIC⁽¹⁾		TPS62770	UNIT
		YFP
		TERMINALS
R_θJA	Junction-to-ambient thermal resistance	90.6	°C/W
R_θJCtop	Junction-to-case (top) thermal resistance	0.6
R_θJB	Junction-to-board thermal resistance	13.8
ψ_JT	Junction-to-top characterization parameter	2.8
ψ_JB	Junction-to-board characterization parameter	13.7
R_θJCbot	Junction-to-case (bottom) thermal resistance	n/a

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.3 Electrical Characteristics

V_IN = 3.6V, T_A = –40°C to 85°C typical values are at T_A = 25°C (unless otherwise noted)

PARAMETER		TEST CONDITIONS		MIN	TYP	MAX	UNIT
SUPPLY
I_SD	Shutdown current into V_IN	EN1 = EN2/PWM = GND, CTRL GND, BM = GND,			0.1	1850	nA
V_{TH_} _UVLO+	Undervoltage lockout threshold	Rising V_IN			2.1	2.22	V
V_{TH_UVLO-}	Undervoltage lockout threshold	Falling V_IN			1.9	2	V
INPUTS EN1, EN2/PWM, BM, CTRL,VSEL 1-3
V_{IH TH}	High level input threshold					1.2	V
V_{IL TH}	Low level input threshold			0.4			V
I_IN	Input bias Current	T_J = 25°C				10	nA
I_IN	Input bias Current	T_J = –40°C to 85°C				25	nA
STEP-DOWN CONVERTER
I_Q	Operating quiescent current	EN1 = V_IN, EN2/PWM = GND, CTRL = GND, I_OUT = 0µA, V_OUT = 1.8V, device not switching,			370	1850	nA
I_Q	Operating quiescent current	EN1 = V_IN, EN2/PWM = GND, I_OUT = 0mA, CTRL = GND, V_OUT = 1.8V , device switching			500		nA
V_VOUT	Output voltage range			1.0		3.0	V
	Output voltage accuracy	PFM mode		-2.5	0	2.5	%
	Output voltage accuracy	PWM mode		-2	0	2
	DC output voltage load regulation	V_OUT = 1.8V			0.001		%/mA
	DC output voltage line regulation	V_OUT = 1.8V, I_OUT = 10 mA, 2.5V ≤ V_IN ≤ 5.5V			0		%/V
R_DS(ON)	High side MOSFET on-resistance	I_OUT = 50mA			0.45		Ω
R_DS(ON)	Low Side MOSFET on-resistance	I_OUT = 50mA			0.22		Ω
I_LIMF	High side MOSFET switch current limit			480	600	720	mA
I_LIMF	Low side MOSFET switch current limit				600		mA
R_{DSCH_VO1}	Discharge switch on-resistance	EN = GND, I_VO1 = -10mA into VO1 pin			20	65	Ω
I_{IN_VO1}	Bias current into VO1 pin	EN = V_IN, V_OUT = 1.8V	T_J = 25°C		40	100	nA
I_{IN_VO1}	Bias current into VO1 pin	EN = V_IN, V_OUT = 1.8V	T_J = –40°C to 85°C			1010	nA
V_{TH_100+}	Auto 100% Mode leave detection threshold ⁽¹⁾	Rising V_IN,100% Mode is left with V_IN = V_OUT + V_{TH_100+}, max value at T_J = 85°C		150	250	370	mV
V_{TH_100-}	Auto 100% Mode enter detection threshold ⁽¹⁾	Falling V_IN, 100% Mode is entered with V_IN = V_OUT + V_{TH_100-}, max value at T_J = 85°C		85	200	310	mV
t_ONmin	Minimum ON time	V_OUT = 2.0V, I_OUT = 0 mA			225		ns
t_OFFmin	Minimum OFF time				50		ns
t_{Startup_delay}	Regulator start up delay time	From transition EN1 = low to high until device starts switching			1	5	ms
t_Softstart	Softstart time with reduced switch current limit				700	1200	µs
I_{LIM_softstart}	High side MOSFET switch current limit	Reduced switch current limit during softstart		80	150	200	mA
I_{LIM_softstart}	Low side MOSFET switch current limit	Reduced switch current limit during softstart			150		mA
LOAD SWITCH
R_LOAD	MOSFET on-resistance	I_LOAD = 50mA, CTRL = V_IN, V_OUT = 1.8V,			0.6	1.27	Ω
t_{rise_LOAD}	V_LOAD rise time	Starting with CTRL low to high transition, time to ramp V_LOAD from 95%, V_OUT = 1.8V, I_LOAD = 20mA			315	800	μs
R_DCHRG	MOSFET on-resistance				20	65	Ω
STEP-UP CONVERTER
I_{Q_VIN}	Quiescent current into VIN pin	EN2/PWM = VIN, BM = GND, EN1 = GND, no load, no switching, V_OUT = 12 V			110	200	µA
V_OUT	Output voltage range	EN2/PWM = VIN, BM = GND		4.5		15	V
V_{OUT_12V}	12-V output voltage accuracy	FB pin connected to VIN pin, EN2/PWM = V_IN, BM = GND		11.7	12	12.3	V
V_FB	Feedback voltage	PWM mode, BM = GND, EN2/PWM = V_IN		0.775	0.795	0.814	V
	Feedback voltage	PFM mode, BM = GND, EN2/PWM = V_IN			0.803		V
	Feedback regulation voltage under brightness control	EN2/PWM = VIN, BM = VIN,		189	200	206	mV
		VFB =50mV, BM = VIN, D(PWM) @ EN2/PWM = 25%,		40	50	60	mV
		VFB = 20mV, BM = VIN, D(PWM) @ EN2/PWM = 10%		13	20	27	mV
t_{Dim_Off}	Dimming signal on pin EN2/PWM				270	160	μs
t_{Dim_On}	Dimming signal on pin EN2/PWM			1			μs
V_OVP	Output overvoltage protection threshold			17	17.7	18.4	V
V_{OVP_HYS}	Over voltage protection hysteresis				800		mV
I_{FB_LKG}	Leakage current into FB pin				5	200	nA
I_{SW_LKG}	Leakage current into SW pin	EN2/PWM = GND			5	500	nA
R_DS(on)	Isolation MOSFET on resistance	V_OUT = 12 V			850		mΩ
R_DS(on)	Low-side MOSFET on resistance	V_OUT = 12 V			450		mΩ
f_SW	Switching frequency	V_OUT = 12 V, PWM mode		850	1050	1250	kHz
t_{ON_min}	Minimal switch on time				150	250	ns
I_{LIM_SW}	Peak switch current limit	V_OUT = 12 V		730	970	1230	mA
I_{LIM_CHG}	Pre-charge current	V_OUT = 0 V			30	55	mA
t_Softstart	Pre-charge time	BM = GND, EN2/PWM from low to high until device starts switching, I_OUT2 = 0mA, C_OUT2 = 10uF			6		ms
t_Softstart	Startup time	V_OUT from V_IN to 12 V, C_{OUT_effective} = 2.2 µF, I_OUT = 0 A			6		ms

(1) V_IN is compared to the programmed output voltage (V_OUT). When V_IN–V_OUT falls below V_{TH_100-} the device enters 100% Mode by turning the high side MOSFET on. The 100% Mode is exited when V_IN–V_OUT exceeds V_{TH_100+} and the device starts switching. The hysteresis for the 100% Mode detection threshold V_{TH_100+} - V_{TH_100-} will always be positive and will be approximately 50 mV(typ.)

6.4 Typical Characteristics

EN2/PWM = low		VOUT1 set to 1.8V
EN1 = high		device not switching

Figure 1. Quiescent current I_QStep-Down converter

	EN1 = EN2/PWM = low

Figure 3. Shutdown current I_SDN

EN2/PWM = high		VOUT2 set to 12V
EN1 = low		device not switching

Figure 2. Quiescent current I_QStep-Up converter