ZHCS309D January 2008 – October 2016 TPS62560 , TPS62561 , TPS62562
PRODUCTION DATA.
- 1 特性
- 2 應用
- 3 說明
- 4 修訂歷史記錄
- 5 Device Comparison Table
- 6 Pin Configuration and Functions
- 7 Specifications
- 8 Detailed Description
- 9 Application and Implementation
- 10Power Supply Recommendations
- 11Layout
- 12器件和文檔支持
- 13機械、封裝和可訂購信息
7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)| MIN | MAX | UNIT | |||
|---|---|---|---|---|---|
| Input voltage range(2) | –0.3 | 7 | V | ||
| Voltage range at EN, MODE | –0.3 | VIN +0.3, ≤ 7 | |||
| Voltage on SW | –0.3 | 7 | |||
| Peak output current | Internally limited | A | |||
| TJ | Maximum operating junction temperature | –40 | 125 | °C | |
| Tstg | Storage temperature | –65 | 150 | °C | |
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to the network ground terminal.
(3) The human-body model is a 100-pF capacitor discharged through a 1.5-kΩ resistor into each terminal. The machine model is a 200-pF capacitor discharged directly into each terminal.
7.2 ESD Ratings
| VALUE | UNIT | |||
|---|---|---|---|---|
| V(ESD) | Electrostatic discharge(3) | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±2000 | V |
| Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±1000 | |||
| Machine model | ±200 | |||
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Manufacturing with less than 500-V HBM is possible with the necessary precautions.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Manufacturing with less than 250-V CDM is possible with the necessary precautions.
7.3 Recommended Operating Conditions
| MIN | MAX | UNIT | ||
|---|---|---|---|---|
| VIN | Supply voltage | 2.5 | 5.5 | V |
| VOUT | Output voltage range for adjustable voltage | 0.85 | VIN | V |
| TA | Operating ambient temperature | –40 | 85 | °C |
| TJ | Operating junction temperature | –40 | 125 | °C |
7.4 Thermal Information
| THERMAL METRIC(1) | TPS62560, TPS62562 | TPS62561 | UNIT | |
|---|---|---|---|---|
| DRV (SON) | DDC (SOT) | |||
| 6 PINS | 5 PINS | |||
| RθJA | Junction-to-ambient thermal resistance | 67.8 | 226.9 | °C/W |
| RθJC(top) | Junction-to-case (top) thermal resistance | 88.5 | 40.7 | °C/W |
| RθJB | Junction-to-board thermal resistance | 37.2 | 48.8 | °C/W |
| ψJT | Junction-to-top characterization parameter | 2.0 | 0.5 | °C/W |
| ψJB | Junction-to-board characterization parameter | 37.6 | 48.1 | °C/W |
| RθJC(bot) | Junction-to-case (bottom) thermal resistance | 7.9 | n/a | °C/W |
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.
7.5 Electrical Characteristics
Over full operating ambient temperature range, typical values are at TA = 25°C. Unless otherwise noted, specifications apply for condition VIN = EN = 3.6 V. External components CIN = 4.7 μF 0603, COUT = 10 μF 0603, L = 2.2 μH| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| SUPPLY | ||||||
| VIN | Input voltage range | 2.5 | 5.5 | V | ||
| IOUT | Output current | VIN 2.5 V to 5.5 V | 600 | mA | ||
| IQ | Operating quiescent current | IOUT = 0 mA, PFM mode enabled (MODE = GND), device not switching |
15 | μA | ||
| IOUT = 0 mA, PFM mode enabled (MODE = GND), device switching, VOUT = 1.8 V, See (1) |
18.5 | |||||
| IOUT = 0 mA, switching with no load (MODE = VIN), PWM operation, VOUT = 1.8 V, VIN = 3 V |
3.8 | mA | ||||
| ISD | Shutdown current | EN = GND | 0.5 | μA | ||
| UVLO | Undervoltage lockout threshold | Falling | 1.85 | V | ||
| Rising | 1.95 | |||||
| ENABLE, MODE | ||||||
| VIH | High-level input voltage, EN, MODE | 2 V ≤ VIN ≤ 5.5 V | 1 | VIN | V | |
| VIL | Low-level input voltage, EN, MODE | 2 V ≤ VIN ≤ 5.5 V | 0 | 0.4 | V | |
| IIN | Input bias current, EN, MODE | EN, MODE = GND or VIN | 0.01 | 1 | μA | |
| POWER SWITCH | ||||||
| RDS(on) | High side MOSFET on-resistance | VIN = VGS = 3.6 V, TA = 25°C | 252 | 492 | mΩ | |
| Low side MOSFET on-resistance | 194 | 391 | ||||
| ILIMF | Forward current limit, high and low side MOSFET | VIN = VGS = 3.6 V | 0.8 | 1 | 1.2 | A |
| TSD | Thermal shutdown | Increasing junction temperature | 140 | °C | ||
| Thermal-shutdown hysteresis | Decreasing junction temperature | 20 | ||||
| OSCILLATOR | ||||||
| fSW | Oscillator frequency | 2 V ≤ VIN ≤ 5.5 V | 2.25 | MHz | ||
| OUTPUT | ||||||
| VOUT | Adjustable-output voltage range | 0.85 | VIN | V | ||
| VOUT | TPS62562 fixed output voltage | VIN ≥ 1.8 V | 1.8 | V | ||
| Vref | Reference voltage | 600 | mV | |||
| VFB | Feedback voltage, PWM mode | MODE = VIN, PWM operation, for fixed-output-voltage versions VFB = VOUT, 2.5 V ≤ VIN ≤ 5.5 V, 0 mA ≤ IOUT ≤ 600 mA (3) |
–2.5% | 0% | 2.5% | |
| Feedback voltage, PFM mode | MODE = GND, device in PFM mode, voltage positioning active(1) | 1% | ||||
| Load regulation | PWM mode | –1 | %/A | |||
| tStart Up | Start-up time | Time from active EN to reach 95% of VOUT nominal | 500 | μs | ||
| tRamp | VOUT ramp-up time | Time to ramp from 5% to 95% of VOUT | 250 | μs | ||
| Ilkg | Leakage current into SW terminal | VIN = 3.6 V, VIN = VOUT = VSW, EN = GND (2) | 0.5 | 1 | μA | |
(1) In PFM mode, the internal reference voltage is set to typ. 1.01 × Vref. See the section.
(2) In fixed-output-voltage versions, the internal resistor divider network is disconnected from the FB terminal.
(3) For VIN = VOUT + 0.6 V
7.6 Typical Characteristics
Figure 1. Shutdown Current into VIN vs Input Voltage
Figure 3. Static Drain-Source ON-State Resistance
Figure 2. Quiescent Current vs Input Voltage
Figure 4. Static Drain-Source ON-State Resistance vs Input Voltage