SLVS762C June 2007 – July 2015 TPS62240 , TPS62242 , TPS62243
PRODUCTION DATA.
- 1 Features
- 2 Applications
- 3 Description
- 4 Revision History
- 5 Device Options
- 6 Pin Configuration and Functions
- 7 Specifications
- 8 Detailed Description
- 9 Application and Implementation
- 10Power Supply Recommendations
- 11Layout
- 12Device and Documentation Support
- 13Mechanical, Packaging, and Orderable Information
7 Specifications
7.1 Absolute Maximum Ratings
Over operating free-air temperature range (unless otherwise noted)(1)| MIN | MAX | UNIT | |||
|---|---|---|---|---|---|
| VIN | Input voltage (2) | –0.3 | 7 | V | |
| Voltage at EN, MODE | –0.3 | VIN +0.3, ≤7 | V | ||
| Voltage on SW | –0.3 | 7 | V | ||
| Peak output current | Internally limited | A | |||
| TJ | Maximum operating junction temperature | –40 | 125 | °C | |
| Tstg | Storage temperature | –65 | 150 | °C | |
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute–maximum–rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to network ground terminal.
7.2 ESD Ratings
| VALUE | UNIT | |||
|---|---|---|---|---|
| V(ESD) | Electrostatic discharge(3) | Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) | ±2000 | V |
| Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2) | ±1000 | |||
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
(3) The human body model is a 100-pF capacitor discharged through a 1.5-kΩ resistor into each pin.
7.3 Recommended Operating Conditions
Over operating free-air temperature range (unless otherwise noted)| MIN | NOM | MAX | UNIT | ||
|---|---|---|---|---|---|
| VIN | Supply voltage, VIN | 2 | 6 | V | |
| Output voltage for adjustable voltage | 0.6 | VIN | V | ||
| TA | Operating ambient temperature | –40 | 85 | °C | |
| TJ | Operating junction temperature | –40 | 125 | °C | |
7.4 Thermal Information
| THERMAL METRIC(1) | TPS6224x | UNIT | ||
|---|---|---|---|---|
| DRV [WSON] | DDC [SOT] | |||
| 6 PINS | 5 PINS | |||
| RθJA | Junction-to-ambient thermal resistance | 67.8 | 226.9 | °C/W |
| RθJC(top) | Junction-to-case (top) thermal resistance | 88.5 | 40.7 | °C/W |
| RθJB | Junction-to-board thermal resistance | 37.2 | 48.8 | °C/W |
| ψJT | Junction-to-top characterization parameter | 2.0 | 0.5 | °C/W |
| ψJB | Junction-to-board characterization parameter | 37.6 | 48.1 | °C/W |
| RθJC(bot) | Junction-to-case (bottom) thermal resistance | 7.9 | N/A | °C/W |
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.
7.5 Electrical Characteristics
Over full operating ambient temperature range, typical values are at TA = 25°C. Unless otherwise noted, specifications apply for condition VIN = EN = 3.6 V. External components CIN = 4,7 μF 0603, COUT = 10 μF 0603, L = 2.2 μH, refer to parameter measurement information.| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| SUPPLY | ||||||
| VIN | Input voltage range | 2 | 6 | V | ||
| IOUT | Output current | 2.3 V ≤ VIN ≤ 6 V | 300 | mA | ||
| 2 V ≤ VIN ≤ 2.3 V | 150 | |||||
| IQ | Operating quiescent current | IOUT = 0 mA. PFM mode enabled (MODE = GND) device not switching | 15 | μA | ||
| IOUT = 0 mA. PFM mode enabled (MODE = GND) device switching, VOUT = 1.8 V, (1) | 18.5 | |||||
| IOUT = 0 mA, switching with no load (MODE = VIN), PWM operation , VOUT = 1.8 V, VIN = 3 V | 3.8 | mA | ||||
| ISD | Shutdown current | EN = GND | 0.1 | 1 | μA | |
| UVLO | Undervoltage lockout threshold | Falling | 1.85 | V | ||
| Rising | 1.95 | |||||
| ENABLE, MODE | ||||||
| VIH | High level input voltage, EN, MODE | 2 V ≤ VIN ≤ 6 V | 1 | VIN | V | |
| VIL | Low level input voltage, EN, MODE | 2 V ≤ VIN ≤ 6 V | 0 | 0.4 | V | |
| IIN | Input bias current, EN, MODE | EN, MODE = GND or VIN | 0.01 | 1 | μA | |
| POWER SWITCH | ||||||
| RDS(on) | High-side MOSFET ON-resistance | VIN = VGS = 3.6 V, TA = 25°C | 240 | 480 | mΩ | |
| Low-side MOSFET ON-resistance | 180 | 380 | ||||
| ILIMF | Forward current-limit MOSFET high-side and low-side | VIN = VGS = 3.6 V | 0.56 | 0.7 | 0.84 | A |
| TSD | Thermal shutdown | Increasing junction temperature | 140 | °C | ||
| Thermal shutdown hysteresis | Decreasing junction temperature | 20 | °C | |||
| OSCILLATOR | ||||||
| fSW | Oscillator frequency | 2 V ≤ VIN ≤ 6 V | 2 | 2.25 | 2.5 | MHz |
| OUTPUT | ||||||
| VOUT | Adjustable output voltage range | 0.6 | VIN | V | ||
| VREF | Reference voltage | 600 | mV | |||
| VFB | Feedback voltage | MODE = VIN, PWM operation, 2 V ≤ VIN ≤ 6 V, in fixed output voltage versions VFB = VOUT, see (3)
|
–1.5% | 0% | 1.5% | |
| Feedback voltage PFM mode | MODE = GND, device in PFM mode | 0% | ||||
| Load regulation | PWM mode | -0.5 | %/A | |||
| tStart Up | Start-up Time | Time from active EN to reach 95% of VOUT nominal | 500 | μs | ||
| tRamp | VOUT ramp-up time | Time to ramp from 5% to 95% of VOUT | 250 | μs | ||
| Ilkg | Leakage current into SW pin | VIN = 3.6 V, VIN = VOUT = VSW, EN = GND,(2) | 0.1 | 1 | μA | |
(1) See the parameter measurement information.
(2) In fixed output voltage versions, the internal resistor divider network is disconnected from FB pin.
(3) For VIN = VOUT + 0.6 .
7.6 Typical Characteristics
Figure 1. Shutdown Current Into VIN vs Input Voltage
Figure 3. Static Drain-Source On-State Resistance vs Input Voltage
Figure 2. Quiescent Current vs Input Voltage
Figure 4. Static Drain-Source On-State Resistance vs Input Voltage