SLVSAW2C March 2012 – October 2016 TPS62090 , TPS62091 , TPS62092 , TPS62093
PRODUCTION DATA.
- 1 Features
- 2 Applications
- 3 Description
- 4 Revision History
- 5 Device Comparison Table
- 6 Pin Configuration and Functions
- 7 Specifications
-
8 Detailed Description
- 8.1 Overview
- 8.2 Functional Block Diagram
- 8.3
Feature Description
- 8.3.1 Enable and Disable (EN)
- 8.3.2 Softstart (SS) and Hiccup Current Limit During Startup
- 8.3.3 Voltage Tracking (SS)
- 8.3.4 Short Circuit Protection (Hiccup-Mode)
- 8.3.5 Output Discharge Function
- 8.3.6 Power Good Output (PG)
- 8.3.7 Frequency Set Pin (FREQ)
- 8.3.8 Undervoltage Lockout (UVLO)
- 8.3.9 Thermal Shutdown
- 8.3.10 Charge Pump (CP, CN)
- 8.4 Device Functional Modes
- 9 Application and Implementation
- 10Power Supply Recommendations
- 11Layout
- 12Device and Documentation Support
- 13Mechanical, Packaging, and Orderable Information
7 Specifications
7.1 Absolute Maximum Ratings(1)
Over operating free-air temperature range (unless otherwise noted)| VALUE | UNIT | |||
|---|---|---|---|---|
| MIN | MAX | |||
| Voltage range(2) | PVIN, AVIN, FB, SS, EN, FREQ, VOS | –0.3 | 7 | V |
| SW, PG | –0.3 | VIN + 0.3 | ||
| CN, CP | -0.3 | VIN + 7.0 | ||
| Power Good sink current | PG | 1 | mA | |
| Operating junction temperature, TJ | –40 | 150 | °C | |
| Storage temperature, Tstg | –65 | 150 | °C | |
(1) Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute–maximum–rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to network ground pin.
7.2 ESD Ratings
| VALUE | UNIT | |||
|---|---|---|---|---|
| V(ESD) | Electrostatic discharge | Human body model (HBM) per ANSI/ESDA/JEDEC JS-001, all pins (1) | ±2000 | V |
| Charged device model (CDM), per JEDEC specification JESD22-C101, all pins (2) | ±500 | V | ||
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.3 Recommended Operating Conditions(1)
| MIN | TYP | MAX | UNIT | ||
|---|---|---|---|---|---|
| VIN | Input voltage range VIN | 2.5 | 6 | V | |
| TA | Operating ambient temperature | –40 | 85 | °C | |
| TJ | Operating junction temperature | –40 | 125 | °C |
(1) See the application section for further information
7.4 Thermal Information
| THERMAL METRIC(1) | TPS6209x | UNIT | |
|---|---|---|---|
| QFN (16 PINS) | |||
| RθJA | Junction-to-ambient thermal resistance | 47 | °C/W |
| RθJCtop | Junction-to-case (top) thermal resistance | 60 | °C/W |
| RθJB | Junction-to-board thermal resistance | 20 | °C/W |
| ψJT | Junction-to-top characterization parameter | 1.5 | °C/W |
| ψJB | Junction-to-board characterization parameter | 20 | °C/W |
| RθJCbot | Junction-to-case (bottom) thermal resistance | 5.3 | °C/W |
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report (SPRA953).
7.5 Electrical Characteristics
VIN = 3.6 V, TA = –40°C to 85°C, typical values are at TA = 25°C (unless otherwise noted)| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| SUPPLY | ||||||
| VIN | Input voltage range | 2.5 | 6 | V | ||
| IQIN | Quiescent current | Not switching, FB = FB +5%, into PVIN and AVIN | 20 | µA | ||
| Isd | Shutdown current | Into PVIN and AVIN | 0.6 | 5 | µA | |
| UVLO | Undervoltage lockout threshold | VIN falling | 2.1 | 2.2 | 2.3 | V |
| Undervoltage lockout hysteresis | 200 | mV | ||||
| Thermal shutdown | Temperature rising | 150 | ºC | |||
| Thermal shutdown hysteresis | 20 | ºC | ||||
| Control SIGNALS EN, FREQ | ||||||
| VH | High level input voltage | VIN = 2.5 V to 6 V | 1 | 0.65 | V | |
| VL | Low level input voltage | VIN = 2.5 V to 6 V | 0.6 | 0.4 | V | |
| Ilkg | Input leakage current | EN, FREQ = GND or VIN | 10 | 100 | nA | |
| RPD | Pull down resistance | 400 | kΩ | |||
| Softstart | ||||||
| ISS | Softstart current | 6.3 | 7.5 | 8.7 | µA | |
| POWER GOOD | ||||||
| Vth | Power good threshold | Output voltage rising | 93% | 95% | 97% | |
| Output voltage falling | 88% | 90% | 92% | |||
| VL | Low level voltage | I(sink) = 1 mA | 0.4 | V | ||
| IPG | PG sinking current | 1 | mA | |||
| Ilkg | Leakage current | VPG = 3.6 V | 10 | 100 | nA | |
| POWER SWITCH | ||||||
| RDS(on) | High side FET on-resistance | ISW = 500 mA | 50 | mΩ | ||
| Low side FET on-resistance | ISW = 500 mA | 40 | mΩ | |||
| ILIM | High side FET switch current limit | 3.7 | 4.6 | 5.5 | A | |
| fs | Switching frequency | FREQ = GND, IOUT = 3 A | 2.8 | MHz | ||
| FREQ = VIN, IOUT = 3 A | 1.4 | MHz | ||||
| OUTPUT | ||||||
| Vs | Output voltage range | 0.8 | VIN | V | ||
| Rod | Output discharge resistor | EN = GND, VOUT = 1.8 V | 200 | Ω | ||
| VFB | Feedback regulation voltage | 0.8 | V | |||
| VFB | Feedback voltage accuracy(1) (2)(3) |
VIN ≥ VOUT + 1 V, TPS62090 adjustable output version | ||||
| IOUT = 1 A, PWM mode, TJ = 25°C | -1% | +1% | ||||
| IOUT = 1 A, PWM mode | -1.4% | +1.4% | ||||
| IOUT = 0 mA, FREQ = 2.8 MHz, VOUT ≥ 0.8 V, PFM mode | -1.4% | +3% | ||||
| IOUT = 0 mA, FREQ = 1.4 MHz, VOUT ≥ 1.2 V, PFM mode | -1.4% | +3% | ||||
| IOUT = 0 mA, FREQ = 1.4 MHz, VOUT < 1.2V, PFM mode | -1.4% | +3.7% | ||||
| IFB | Feedback input bias current | VFB = 0.8 V, TPS62090 adjustable output version | 10 | 100 | nA | |
| VOUT | Output voltage accuracy (2)(3) | VIN ≥ VOUT + 1 V, fixed output voltage | ||||
| IOUT = 1 A, PWM mode | -1.4% | +1.4% | ||||
| IOUT = 0 mA, FREQ = High and Low, PFM mode | -1.4% | +2.5% | ||||
| Line regulation | VOUT = 1.8 V, PWM operation | 0.016 | %/V | |||
| Load regulation | VOUT = 1.8 V, PWM operation | 0.04 | %/A | |||
(1) For output voltages < 1.2 V, use a 2 x 22 µF output capacitance to achieve +3% output voltage accuracy.
(2) Conditions: f = 2.8 MHz, L = 0.47 µH, COUT = 22 µF or f = 1.4 MHz, L = 1 µH, COUT = 22 µF.
(3) For more information, see the Power Save Mode Operation section of this data sheet.
