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ZHCS442F September 2011 – November 2016 TPS62080 , TPS62080A , TPS62081 , TPS62082

PRODUCTION DATA.

封裝選項(xiàng)

機(jī)械數(shù)據(jù) (封裝 | 引腳)

DSG|8
- MPDS308C

散熱焊盤機(jī)械數(shù)據(jù) (封裝 | 引腳)

DSG|8
- QFND141I

訂購(gòu)信息

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)⁽¹⁾

	MIN	MAX	UNIT
Voltage at VIN, PG, VOS⁽²⁾	–0.3	7	V
Voltage at SW⁽²⁾⁽³⁾	–1	7	V
Voltage at FB⁽²⁾	–0.3	3.6	V
Voltage at EN, MODE⁽²⁾	–0.3	VIN + 0.3	V
Sink current at PG	0	0.5	mA
Operating junction temperature, T_J	–40	150	°C
Storage temperature, T_stg	–65	150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute–maximum–rated conditions for extended periods may affect device reliability.

(2) All voltage values are with respect to network ground terminal.

(3) During operation, device switching.

7.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾	±2000	V
V_(ESD)	Electrostatic discharge	Charged-device model (CDM), per JEDEC specification JESD22-C101⁽²⁾	±500	V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions⁽¹⁾

		MIN	MAX	UNIT
V_IN	Input voltage	2.3	6	V
V_OUT	Output voltage	0.5	4	V
I_SNOOZE	Load current in Snooze Mode		2	mA
T_J	Operating junction temperature	–40	125	°C

(1) Refer to the Application and Implementation section for further information.

7.4 Thermal Information

THERMAL METRIC⁽¹⁾		TPS6208x	UNIT
		DSG (WSON)
		8 PINS
R_θJA	Junction-to-ambient thermal resistance	59.7	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	70.1
R_θJB	Junction-to-board thermal resistance	30.9
ψ_JT	Junction-to-top characterization parameter	1.4
ψ_JB	Junction-to-board characterization parameter	31.5
R_θJC(bot)	Junction-to-case (bottom) thermal resistance	8.6

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

7.5 Electrical Characteristics

Over recommended free-air temperature range, T_J = –40°C to 125°C. Typical values are at T_A = 25°C (unless otherwise noted), V_IN= 3.6 V, MODE = LOW.

PARAMETER		TEST CONDITIONS		MIN	TYP	MAX	UNIT
SUPPLY
V_IN	Input voltage range			2.3		6	V
I_Q	Quiescent current into VIN	I_OUT = 0 mA, Device not switching			30		uA
I_Q	Quiescent current into VIN (SNOOZE MODE)	I_OUT = 0 mA, Device not switching, MODE=HIGH			6.5		uA
I_SD	Shutdown current into VIN	EN = LOW				7	µA
I_SD	Shutdown current into VIN	EN = LOW	T_A = -40°C to 85°C			1	µA
V_UVLO	Undervoltage lockout	Input voltage falling			1.8	2	V
V_UVLO	Undervoltage lockout hysteresis	Rising above V_UVLO			120		mV
T_JSD	Thermal shutdown	Temperature rising			150		°C
T_JSD	Thermal shutdown hysteresis	Temperature falling below T_JSD			20		°C
LOGIC INTERFACE (EN MODE)
V_IH	High level input voltage	2.3 V ≤ V_IN ≤ 6 V		1			V
V_IL	Low level input voltage	2.3 V ≤ V_IN ≤ 6 V				0.4	V
I_LKG	Input leakage current				0.01	0.5	µA
POWER GOOD
V_PG	Power good threshold	V_OUT falling referenced to V_OUT nominal		–15%	–10%	–5%
V_PG	Power good hysteresis				5%
V_OL	Low level voltage	I_sink = 500 µA				0.3	V
I_PG,LKG	PG Leakage current	V_PG = 5.0 V			0.01	0.1	µA
OUTPUT
V_OUT	Output voltage range TPS62080, TPS62080A			0.5		4.0	V
	Output voltage accuracy TPS62081	I_OUT = 0 mA; V_IN ≥ 2.3 V		–2.5%		2.5%
	Output voltage accuracy TPS62082	I_OUT = 0 mA; V_IN ≥ 3.6 V		–2.5%		2.5%
	Snooze Mode output voltage accuracy	MODE = HIGH; V_IN ≥ 2.3 V and V_IN ≥ V_OUT+ 1 V		–5%		5%
V_FB	Feedback regulation voltage TPS62080, TPS62080A	V_IN ≥ 2.3 V and V_IN ≥ V_OUT+ 1 V		0.438	0.45	0.462	V
I_FB	Feedback input bias current TPS62080, TPS62080A	V_FB = 0.45 V			10	100	nA
R_DIS	Output discharge resistor	EN = LOW, V_OUT = 1.8 V			1		kΩ
R_DIS	Output discharge resistor	TPS62080A, EN = LOW, V_OUT = 1.2 V		25	40	65	Ω
	Line Regulation				0		%/V
	Load Regulation	TPS62081, TPS62082			–0.25		%/A
R_DS(on)	High-side FET ON-resistance	I_SW = 500 mA			95		mΩ
R_DS(on)	Low-side FET ON-resistance	I_SW = 500 mA			70		mΩ
I_LIM	High-side FET switch current limit	Rising inductor current		1.6	2.8	4	A